Carrier density oscillation in the photoexcited semiconductor
Carrier density oscillation in the photoexcited semiconductor
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光激发半导体中的载流子密度振荡
DOI：
10.1088/1361-6463/abd1a4
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
Liao, Bolin
中科院分区：
文献类型：
--
作者：
Najafi, Ebrahim;Jafari, Amir;Liao, Bolin
半导体受到热力学平衡的扰动，往往会由于竞争过程的自发产生而导致非线性动力学的表现和时空图案的形成。在这里，我们使用扫描超快电子显微镜显示，热载流子在强激发半导体中的输运通过转变为一个振荡过程而变慢；这从分布的第二时刻的膨胀和收缩中得到了证明。我们将这种响应归因于光激电子和空穴在本征场和光生感应场下的空间分离所产生的电场；然后我们引入了一个模拟实验观察的输运模型。我们的发现为高激发半导体中热载流子的静电振荡提供了直接的成像证据，并对它们在空间和时间上的动力学提供了新的见解。
The perturbation of a semiconductor from the thermodynamic equilibrium often leads to the display of non-linear dynamics and formation of spatiotemporal patterns due to the spontaneous generation of competing processes. Here, we use scanning ultrafast electron microscopy to show that the transport of hot carriers in the strongly excited semiconductor slows down by turning into an oscillatory process; this is evidenced by the expansions and contractions in the second moment of the distribution. We attribute such a response to the electric field generated by the spatial separation of photo-excited electrons and holes under intrinsic and photo-induced fields; we then introduce a transport model that mimics the experimental observation. Our finding provides a direct imaging evidence for the electrostatic oscillation of hot carriers in the highly excited semiconductor and offers new insights into their dynamics in space and time.
低能量密度飞秒激光脉冲对晶体硅的表面损伤
DOI：
--
发表时间：
2004
期刊：
影响因子：
--
作者：
Y. Lam;D. V. Tran;H. Zheng;V. M. Murukeshan;J. Chai;D. Hardt
通讯作者：
D. Hardt
硅中表面专有载流子动力学的超快成像
影响因子：
3.2
作者：
E. Najafi;Amir Jafari
通讯作者：
Amir Jafari