Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy
Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy
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通过等离子体辅助分子束外延生长的 III 族氮化物激光二极管具有极长的使用寿命
DOI：
10.1016/j.mssp.2018.12.011
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发表时间：
2019
影响因子：
4.1
通讯作者：
C. Skierbiszewski
中科院分区：
文献类型：
--
作者：
G. Muzioł;M. Siekacz;K. Nowakowski;M. Hajdel;J. Smalc;A. Feduniewicz;E. Grzanka;P. Wolny;H. Turski;P. Wiśniewski;P. Perlin;C. Skierbiszewski
本文研究了在低穿透位错密度氨-GaN 衬底上通过等离子体辅助分子束外延生长的 III 族氮化物蓝色激光二极管的可靠性。研究发现，重镁掺杂电子阻挡层（EBL）中形成的缺陷强烈影响器件的寿命。这些缺陷被识别为产生螺纹位错的基底堆垛层错域。介绍了 EBL 生长条件对其产生的影响以及对器件寿命的影响。通过优化 EBL 的生长条件，III 族氮化物激光二极管的寿命从 2000 小时延长至 100,000 小时。
In this paper the reliability of III-nitride blue laser diodes grown by plasma-assisted molecular beam epitaxy on low threading dislocation density Ammono-GaN substrates is studied. It is found that defects formed in the heavily Mg-doped electron blocking layer (EBL) strongly affect the lifetime of the devices. These defects are identified as basal stacking fault domains which create threading dislocations. The effect of the EBL growth conditions on their generation and influence on lifetime of devices is presented. By optimization of the growth conditions of the EBL the lifetime of III-nitride laser diodes has been increased from 2000 up to 100,000 h.
DOI：
10.1002/pssa.201700513
发表时间：
2018-05-23
影响因子：
2
作者：
Murayama, Masahiro;Nakayama, Yusuke;Narui, Hironobu
通讯作者：
Narui, Hironobu