Scaling MOSFETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source
Scaling MOSFETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source
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将 MOSFET 缩小至 10 nm：库仑效应、源匮乏和虚拟源
DOI：
10.1109/iwce.2009.5091145
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
N. Sano
中科院分区：
文献类型：
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作者：
M. Fischetti;S. Jin;T. Tang;P. Asbeck;Y. Taur;S. Laux;N. Sano
在我们尝试将FET尺寸缩小到10 nm长度的过程中，寻求传统Si CMOS的替代品，理由是：（1）Si似乎已经达到其技术和性能极限，以及（2）使用替代的高迁移率沟道材料将提供缺失的性能。借助数值模拟，我们确定了为什么Si似乎确实遇到了固有性能障碍的原因，以及高迁移率半导体是否确实可以满足我们的愿望。长距离和短距离的电子-电子相互作用的作用一起重新审视最近的历史性能趋势的分析。本文还对态密度瓶颈和源饥饿问题进行了综述，以了解替代衬底可能给我们带来的优势。最后，著名的“虚源模型”进行了分析，以评估它是否可以作为一个定量的工具，以指导我们的10纳米栅极长度。
In our attempts to scale FETs to the 10 nm length, alternatives to conventional Si CMOS are sought on the grounds that: (1) Si seems to have reached its technological and performance limits and (2) the use of alternative high-mobility channel materials will provide the missing performance. With the help of numerical simulations here we establish the reasons why indeed Si seems to have hit an intrinsic performance barrier and whether or not high mobility semiconductors can indeed grant us our wishes. The role of long-and short-range electron-electron interactions are revisited together with a recent analysis of the historical performance trends. The density-of-states (DOS) bottleneck and source starvation issues are also reviewed to see what advantage alternative substrates may bring us. Finally, the well-known ‘virtual source model’ is analyzed to assess whether it can be used as a quantitative tool to guide us to the 10 nm gate length.
宽带隙半导体器件二维载流子迁移率的蒙特卡罗模拟
DOI：
--
发表时间：
2021
期刊：
影响因子：
--
作者：
N. Mori;H. Tanaka;T. Hoshino;G. Mil'nikov
通讯作者：
G. Mil'nikov