Constructing phase boundary in AgNbO(3) antiferroelectrics: pathway simultaneously achieving high energy density and efficiency.
Constructing phase boundary in AgNbO(3) antiferroelectrics: pathway simultaneously achieving high energy density and efficiency.
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在Agnbo中构建相边界（3）抗fiferroelectrics：同时达到高能量密度和效率的途径。
DOI：
10.1038/s41467-020-18665-5
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发表时间：
2020-09-24
影响因子：
16.6
通讯作者：
Wei Y
中科院分区：
文献类型：
--
作者：
Luo N;Han K;Cabral MJ;Liao X;Zhang S;Liao C;Zhang G;Chen X;Feng Q;Li JF;Wei Y
高储能密度(WREC)和高效率(η)的介质电容器对高功率/脉冲功率电子系统的需求很大，但最新的无铅介质材料面临着以一个参数为代价增加另一个参数的挑战。本文报道了在(1-x)AgNbO_3-xAgTaO_3固溶体系统中，通过构造室温M2-M_3相界，可同时获得高WREC6.3AgNbO_3-xAgTaO_3，η为90%。设计的材料在20-150 °C的宽温度范围内表现出高储能稳定性，并具有高达106次循环的卓越循环可靠性。扫描电子显微镜和同步辐射X射线衍射仪证实了该固溶体具有独特的弛豫反铁电特性，与局域结构不均匀和反铁电有序性有关。这项工作为开发高功率储能应用的新型无铅介质提供了良好的范例。介质电容器在电子系统中得到了广泛的应用，但与其他电化学储能相比，其能量密度较低。在这里，作者构造了扩散相边界，以同时实现AgNbO_3反铁电体的高储能密度和高储能效率。
Dielectric capacitors with high energy storage density (Wrec) and efficiency (η) are in great demand for high/pulsed power electronic systems, but the state-of-the-art lead-free dielectric materials are facing the challenge of increasing one parameter at the cost of the other. Herein, we report that high Wrec of 6.3 J cm-3 with η of 90% can be simultaneously achieved by constructing a room temperature M2–M3 phase boundary in (1-x)AgNbO3-xAgTaO3 solid solution system. The designed material exhibits high energy storage stability over a wide temperature range of 20–150 °C and excellent cycling reliability up to 106 cycles. All these merits achieved in the studied solid solution are attributed to the unique relaxor antiferroelectric features relevant to the local structure heterogeneity and antiferroelectric ordering, being confirmed by scanning transmission electron microscopy and synchrotron X-ray diffraction. This work provides a good paradigm for developing new lead-free dielectrics for high-power energy storage applications. Dielectric capacitors are widely used in electronic systems but they possess inferior energy density in comparison with other electrochemical energy storage. Here, the authors construct a diffused phase boundary to simultaneously achieve high energy storage density and efficiency in AgNbO3antiferroelectrics.
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影响因子：
0.8
作者：
CROSS, LE
通讯作者：
CROSS, LE
A位/B位共掺杂AgNbO3无铅反铁电陶瓷的超高储能密度：洞察反铁电的起源
影响因子：
11.9
作者：
Han, Kai;Luo, Nengneng;Wei, Yuezhou
通讯作者：
Wei, Yuezhou
影响因子：
2.2
作者：
Lazic, Ivan;Bosch, Eric G. T.;Lazar, Sorin
通讯作者：
Lazar, Sorin
具有高储能密度和效率的无铅Ag1-3x La x NbO3反铁电陶瓷
影响因子：
3.9
作者：
Luo, Nengneng;Han, Kai;Wei, Yuezhou
通讯作者：
Wei, Yuezhou
影响因子：
--
作者：
KITTEL, C
通讯作者：
KITTEL, C