Cubic boron nitride formation on Si (100) substrates at room temperature by pulsed laser deposition
Cubic boron nitride formation on Si (100) substrates at room temperature by pulsed laser deposition
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室温下脉冲激光沉积在 Si (100) 衬底上形成立方氮化硼
DOI：
10.1063/1.108179
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发表时间：
1992
影响因子：
4
通讯作者：
D. Ottesen
中科院分区：
文献类型：
--
作者：
T. Friedmann;K. Mccarty;E. Klaus;D. Boehme;W. M. Clift;H. Johnsen;M. Mills;D. Ottesen
我们正在研究氮化硼系统，通过使用脉冲准分子激光烧蚀从六方氮化硼（hBN）的目标，以形成BN膜。我们已经在N2环境背景气体中在加热（600 °C）和室温硅（100）表面上沉积了BN膜。傅里叶变换红外（FTIR）反射光谱表明，在高温下生长的薄膜具有短程sp2（类六方）有序，而在室温下生长的薄膜是sp3键合BN和sp2键合BN的混合物。电子衍射证实在低温下生长的膜中存在立方BN（cBN）材料，并且相应的TEM晶格图像显示晶粒尺寸为100 A。薄膜中cBN的存在与激光能量密度相关，立方材料出现在2.4 mJ/cm 2左右。俄歇电子能谱（AES）表明，薄膜是氮缺乏。
We are studying the boron nitride system by using a pulsed excimer laser to ablate from hexagonal BN(hBN) targets to form BN films. We have deposited BN films on heated (600 °C) and room‐temperature silicon (100) surface in an ambient background gas of N2. Fourier transform infrared (FTIR) reflection spectroscopy indicates that the films grown at high temperature have short‐range sp2 (hexagonal‐like) order, whereas films grown at room temperature are a mixture of sp3‐bonded BN and sp2‐bonded BN. Electron diffraction confirms the presence of cubic BN (cBN) material in the films grown at low temperature and the corresponding TEM lattice images show a grain size of ∼200 A. The presence of cBN in the films correlates with laser energy density, with cubic material appearing around 2.4 mJ/cm2. Auger electron spectroscopy (AES) indicates that the films are nitrogen deficient.
影响因子：
4
作者：
HIGASHI, GS;CHABAL, YJ;RAGHAVACHARI, K
通讯作者：
RAGHAVACHARI, K