Modulation speed limits of a graphene-based modulator

Modulation speed limits of a graphene-based modulator
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基于石墨烯的调制器的调制速度限制

DOI:
10.1007/s11082-018-1324-4
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发表时间:
2018-02
影响因子:
3
通讯作者:
Liu HX
Liu HX
中科院分区:
工程技术4区
文献类型:
--
作者:
Qu Sheng;Ma Congcong;Wang Shulong;Liu Hongxia;Dong Lu;Wang SL;Liu HX

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工作在近红外波段的电光调制器是现代光学系统中的关键器件。调制速度是衡量电光调制器性能的一个重要参数。然而,石墨烯基调制器的调制速度受接触电阻和量子电容的控制,在以前的数值模拟中很难计算。本文提出了一种基于简单结构的调制速度计算方法。仿真结果表明,调制速率约为1.2GHz,与实验结果一致。研究了石墨烯的有效氧化层厚度(EOT)和掺杂对调制速率的影响。同时对调制器的结构参数进行了优化,使调制速度提高到3.6GHz左右。所提出的评估和优化调制速度的方法对于各种石墨烯基器件具有许多应用潜力。
Electro-optical modulators, working at near-infrared range are a key device in modern optical system. Modulation speed is an important parameter to evaluate the performance of an electro-optical modulator. However, the modulation speed which is controlled by contact resistance and quantum capacitance of a graphene-based modulator is difficult to calculate in previous numerical simulation. In this paper, we proposed a method based on a simple structure to calculate the modulation speed. The simulation results show that the modulation speed is approximate 1.2 GHz which is consistent with the experimental results. And the dependence of the modulation speed on the effective oxide thickness (EOT) and doping of graphene are investigated in our work. Meanwhile, we optimize the structure parameters of modulator to promote the modulation speed which can be increased to ~3.6 GHz. The proposed method to evaluate and optimize the modulation speed could have many applications potential for various graphene-based devices.
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发表时间: 2013-01-01
影响因子: 3.3
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