Fermi surface topology and magnetotransport in semimetallic LuSb.
Fermi surface topology and magnetotransport in semimetallic LuSb.
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DOI：
10.1038/s41598-017-12792-8
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发表时间：
2017-10-09
影响因子：
4.6
通讯作者：
Wiśniewski P
中科院分区：
文献类型：
--
作者：
Pavlosiuk O;Kleinert M;Swatek P;Kaczorowski D;Wiśniewski P
几种稀土单羟基化合物表现出极强的磁阻和场致低温电阻率平台。这些特征也是拓扑半金属的标志，因此该家族在磁输运性质和可能的狄拉克费米子态方面进行了深入的探索。我们报告了一个全面的研究费米表面和电输运性质的LuSb，这是这个家族的另一个代表。在低温下，发现LuSb的磁电阻超过3000%，在高达9 t的场中不饱和，霍尔效应和舒布尼科夫-德哈斯振荡的分析表明，该化合物的费米表面由几个来自相当补偿的多带电子结构的袋组成，完全符合我们的第一原理计算。观察到的LuSb的磁输运特性可归因于三维费米面拓扑结构和电子和空穴贡献的补偿。
Several rare-earth monopnictides were shown to exhibit extreme magnetoresistance and field-induced low-temperature plateau of electrical resistivity. These features are also hallmarks of topological semimetals, thus the family is intensively explored with respect to magneto-transport properties and possible hosting Dirac fermion states. We report a comprehensive investigation of Fermi surface and electrical transport properties of LuSb, another representative of this family. At low temperatures, the magnetoresistance of LuSb was found to exceed 3000% without saturation in fields up to 9 T. Analysis of the Hall effect and the Shubnikov–de Haas oscillations revealed that the Fermi surface of this compound consists of several pockets originating from fairly compensated multi-band electronic structure, in full accordance with our first-principles calculations. Observed magnetotransport properties of LuSb can be attributed to the topology of three-dimensional Fermi surface and a compensation of electron and hole contributions.
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影响因子：
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