Interaction between hydrogen isotopes and damaged structures produced by He+ implantation in SiC
Interaction between hydrogen isotopes and damaged structures produced by He+ implantation in SiC
复制标题
氢同位素与 SiC 中注入 He 产生的受损结构之间的相互作用
DOI：
10.1016/j.fusengdes.2005.08.057
复制
发表时间：
2006
影响因子：
1.7
通讯作者：
Shota Tanaka
中科院分区：
文献类型：
--
作者：
Y. Oya;Y. Onishi;T. Takeda;H. Kimura;K. Okuno;Shota Tanaka
为了了解注入的氢同位素与 SiC 中受损结构之间的相互作用机制，将氦 (He+) 离子预先注入到 SiC 中，然后注入 D2+ 离子。通过 X 射线光电子能谱 (XPS) 和热解吸能谱 (TDS) 评估了 Si 和 C 的化学行为以及氘保留。结果发现，He+预注入后，D与Si结合的保留率下降率高于与C结合的保留率，表明He+主要与Si的D捕获位点即碳空位相互作用，发生C原子的位移。一些He保留在碳空位中并通过加热解吸。尽管大部分Si-C键被恢复，但通过加热到1300K以上，一些被取代的C会迁移到表面并聚集在表面上。
To understand the interaction mechanism between implanted hydrogen isotopes and damaged structures in SiC, helium (He+) ions were pre-implanted into SiC and thereafter implanted by D2+ions. The chemical behavior of Si and C, and deuterium retention were evaluated by X-ray photoelectron spectroscopy (XPS) and thermal desorption spectroscopy (TDS). It was found that the decreasing rate of retention of D bound to Si was higher than that bound to C by He+pre-implantation, indicating that He+mainly interacts with the D trapping site with Si, namely carbon vacancies, and the displacement of C atoms would occur. Some He remained in the carbon vacancies and desorbed by heating. Some displaced C would migrate to the surface and aggregate on the surface by heating above 1300K, although most of Si–C bond was recovered.
影响因子：
3.1
作者：
A. Hasegawa;S. Miwa;S. Nogami;A. Taniguchi;T. Taguchi;K. Abe
通讯作者：
A. Hasegawa;S. Miwa;S. Nogami;A. Taniguchi;T. Taguchi;K. Abe