Enhanced controllability of domain-wall pinning by selective domain-wall injection
Enhanced controllability of domain-wall pinning by selective domain-wall injection
复制标题
通过选择性畴壁注入增强畴壁钉扎的可控性
DOI：
10.1063/1.4794135
复制
发表时间：
2013
影响因子：
3.2
通讯作者：
Sung
中科院分区：
文献类型：
--
作者：
Sung
实验结果表明，通过控制注入磁场，在纳米棒和缺口处分布的磁荷相互作用下，通过非对称形核垫将畴壁注入到铁磁纳米线中，可以增强畴壁的退钉扎场.从不对称的垫注入的DW显示的注入场的饱和角的不对称的依赖关系，并被钉扎的缺口与纳米棒垂直于它。我们已经发现，由DW所经历的钉扎势能的形状是由纳米棒的均匀磁化方向的影响和钉扎势能局部修改通过选择性地控制DW注入。这与我们基于微磁模拟的估计是一致的。
It is experimentally reported that depinning fields of domain walls (DWs) under an interaction between magnetic charges distributed at a nanobar and at a notch can be enhanced by controlling injection fields for injecting DWs into the ferromagnetic nanowire with an asymmetrical nucleation pad. The DWs injected from the asymmetrical pad show an asymmetrical dependence of the injection field on the saturation angle and are pinned by the notch with the nanobar vertical to it. We have found that the shape of the pinning potential energy experienced by the DW is affected by the uniformly magnetized direction of the nanobar and the pinning potential energy is locally modified by selectively controlling the DW-injection. This is consistent with our estimation based on micromagnetic simulation.
影响因子：
4
作者：
McGrouther, D.;McVitie, S.;Gentils, A.
通讯作者：
Gentils, A.
影响因子：
4
作者：
Atkinson, D.;Eastwood, D. S.;Bogart, L. K.
通讯作者：
Bogart, L. K.
影响因子：
3.7
作者：
Bogart, L. K.;Atkinson, D.;McVitie, S.
通讯作者：
McVitie, S.