FePc induced highly oriented PIID-BT conjugated polymer semiconductor with high bias-stress stability
FePc induced highly oriented PIID-BT conjugated polymer semiconductor with high bias-stress stability
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FePc诱导具有高偏置应力稳定性的高度取向的PIID-BT共轭聚合物半导体
DOI：
10.1063/1.5042629
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发表时间：
2018-09
影响因子：
4
通讯作者：
Qiu Longzhen
中科院分区：
文献类型：
--
作者：
Liu Lingyun;Du Yuchang;Ge Feng;Wang Xiaohong;Zhang Guobing;Lu Hongbo;Qiu Longzhen
高结晶度和高分子取向性的聚合物半导体材料有利于提高有机场效应晶体管的偏置应力稳定性。基于异靛（IID）-联噻吩（BT）的共轭聚合物（PIID-BT）是一种典型的具有较高空穴迁移率的给体-受体聚合物，可用于偏压-应力稳定性研究。在本工作中，我们使用一种有机小分子FePc来优化PIID-BT半导体的形貌和结构，以提高OFET器件的偏置应力稳定性。FePc掺杂的PIID-BT OFET具有高的结晶度和有序的形貌，在1000 s的应力作用下，漏电流衰减仅为12%。原始PIID-BT设备为50%。电子结构特征揭示了FePc与PIID-BT分子之间通过Fe-O配位作用结合，高结晶度和高分子取向性的聚合物半导体材料有利于提高有机场效应晶体管器件的偏压稳定性。效应晶体管（OFFET）。基于异靛（IID）-联噻吩（BT）的共轭聚合物（PIID-BT）是一种典型的具有较高空穴迁移率的给体-受体聚合物，可用于偏压-应力稳定性研究。在本工作中，我们使用一种有机小分子FePc来优化PIID-BT半导体的形貌和结构，以提高OFET器件的偏置应力稳定性。FePc掺杂的PIID-BT OFET具有高的结晶度和有序的形貌，在1000 s的应力作用下，漏电流衰减仅为12%。原始PIID-BT设备为50%。电子结构特征揭示了FePc与PIID-BT分子间通过Fe-O配位作用的结合，这可能是由于FePc与PIID-BT分子间的相互作用导致的。
Polymer semiconductors with high crystallinity and high molecular orientation have been demonstrated to be in favor of improving the bias-stress stability of organic field-effect transistors (OFETs). The isoindigo (IID)-bithiophene (BT) based conjugated polymer (PIID-BT) is a typical donor–acceptor polymer with higher hole mobility and can be used for the bias-stress stability study. In this work, we use a small organic molecule of FePc to optimize the morphology and structure of the PIID-BT semiconductor to improve the bias-stress stability of OFET devices. The high crystallinity and ordered morphology of the FePc-doped PIID-BT film are realized, and this as-obtained FePc-doped PIID-BT OFET shows more outstanding bias-stress stability, with a lower drain current decay of only 12% over a stressing time of 1000 s than that of ca. 50% for the pristine PIID-BT devices. The electronic structure features reveal the bind between FePc and PIID-BT molecules via the Fe-O coordination interaction, which would be responsible for the efficiently oriented growth of the PIID-BT polymer and eventually promote the bias-stress stability of PIID-BT based OFET devices.Polymer semiconductors with high crystallinity and high molecular orientation have been demonstrated to be in favor of improving the bias-stress stability of organic field-effect transistors (OFETs). The isoindigo (IID)-bithiophene (BT) based conjugated polymer (PIID-BT) is a typical donor–acceptor polymer with higher hole mobility and can be used for the bias-stress stability study. In this work, we use a small organic molecule of FePc to optimize the morphology and structure of the PIID-BT semiconductor to improve the bias-stress stability of OFET devices. The high crystallinity and ordered morphology of the FePc-doped PIID-BT film are realized, and this as-obtained FePc-doped PIID-BT OFET shows more outstanding bias-stress stability, with a lower drain current decay of only 12% over a stressing time of 1000 s than that of ca. 50% for the pristine PIID-BT devices. The electronic structure features reveal the bind between FePc and PIID-BT molecules via the Fe-O coordination interaction, which would be re...
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