Antiferromagnet-mediated spin–orbit torque induced magnetization switching in perpendicularly magnetized L10-MnGa
Antiferromagnet-mediated spin–orbit torque induced magnetization switching in perpendicularly magnetized L10-MnGa
复制标题
垂直磁化 L1(0)-MnGa 中反铁磁体介导的自旋轨道扭矩引起的磁化翻转
DOI:
10.1063/5.0024109
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发表时间:
2021-03
影响因子:
4
通讯作者:
Jianhua Zhao
中科院分区:
文献类型:
--
作者:
X. Zhao;Siwei Mao;Hailong Wang;Dahai Wei;Jianhua Zhao
Current-induced magnetization switching plays an essential role in spintronic devices exhibiting nonvolatility, high-speed processing, and low-power consumption. Here, we report on the spin–orbit torque-induced magnetization switching in perpendicularly magnetized L10-MnGa/FeMn/Pt trilayers grown by molecular-beam epitaxy. An antiferromagnetic FeMn layer is inserted between the spin current generating Pt layer and spin absorbing MnGa layer. Due to the exchange bias effect, the trilayers show field-free spin–orbit torque switching. Overall, the spin transmission efficiency decreases monotonically as the FeMn thickness increases. It is found that the spin current can be transmitted through an 8 nm-thick FeMn layer as evidenced by partial switching of the L10-MnGa. The damping-like spin–orbit torque efficiency shows a peak value at tFeMn = 1.5 nm due to the enhanced interfacial spin transparency and crystalline quality of the FeMn. These results help demonstrate the efficacy of emerging spintronic devices containing antiferromagnetic elements.
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DOI:
10.1063/1.5016567
发表时间:
2018-01
期刊:
Appl. Phys. Lett.
影响因子:
--
作者:
X. P. Zhao;J. Lu;S. W. Mao;Z. F. Yu;D. H. Wei;J. H. Zhao
通讯作者:
J. H. Zhao
影响因子:
64.8
作者:
Lebrun R;Ross A;Bender SA;Qaiumzadeh A;Baldrati L;Cramer J;Brataas A;Duine RA;Kläui M
通讯作者:
Kläui M
影响因子:
3.7
作者:
G. Tatara;Christian Ortiz Pauyac
通讯作者:
G. Tatara;Christian Ortiz Pauyac
影响因子:
3.7
作者:
孟康康
通讯作者:
孟康康
影响因子:
4.6
作者:
Meng K;Miao J;Xu X;Wu Y;Xiao J;Zhao J;Jiang Y
通讯作者:
Jiang Y