Electronically Reconfigurable Photonic Switches Incorporating Plasmonic Structures and Phase Change Materials.
Electronically Reconfigurable Photonic Switches Incorporating Plasmonic Structures and Phase Change Materials.
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结合等离子体结构和相变材料的电子可重构光子开关
DOI:
10.1002/advs.202200383
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发表时间:
2022-07
期刊:
影响因子:
15.1
通讯作者:
Bhaskaran, Harish
中科院分区:
文献类型:
--
作者:
Farmakidis, Nikolaos;Youngblood, Nathan;Lee, June Sang;Feldmann, Johannes;Lodi, Alessandro;Li, Xuan;Aggarwal, Samarth;Zhou, Wen;Bogani, Lapo;Pernice, Wolfram Hp;Wright, C. David;Bhaskaran, Harish
The ever‐increasing demands for data processing and storage will require seamless monolithic co‐integration of electronics and photonics. Phase‐change materials are uniquely suited to fulfill this function due to their dual electro‐optical sensitivity, nonvolatile retention properties, and fast switching dynamics. The extreme size disparity however between CMOS electronics and dielectric photonics inhibits the realization of efficient and compact electrically driven photonic switches, logic and routing elements. Here, the authors achieve an important milestone in harmonizing the two domains by demonstrating an electrically reconfigurable, ultra‐compact and nonvolatile memory that is optically accessible. The platform relies on localized heat, generated within a plasmonic structure; this uniquely allows for both optical and electrical readout signals to be interlocked with the material state of the PCM while still ensuring that the writing operation is electrically decoupled. Importantly, by miniaturization and effective thermal engineering, the authors achieve unprecedented energy efficiency, opening up a path towards low‐energy optoelectronic hardware for neuromorphic and in‐memory computing. Light is uniquely suited to transport parallelized information and perform high‐speed computations. In this article, the authors have engineered a path for optical signal modulation, data storage and computation driven by electronics. By confining light to a nanoscale volume through plasmonic structures and by employing active phase‐change materials the authors demonstrate ultra‐low energy, non‐volatile switching with electrical and optical readout.
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影响因子:
13.6
作者:
Cheng Z;Ríos C;Pernice WHP;Wright CD;Bhaskaran H
通讯作者:
Bhaskaran H
DOI:
10.1002/adpr.202000034
发表时间:
2021-01-01
期刊:
ADVANCED PHOTONICS RESEARCH
影响因子:
--
作者:
Rios, Carlos;Zhang, Yifei;Hu, Juejun
通讯作者:
Hu, Juejun
影响因子:
16.6
作者:
Boybat I;Le Gallo M;Nandakumar SR;Moraitis T;Parnell T;Tuma T;Rajendran B;Leblebici Y;Sebastian A;Eleftheriou E
通讯作者:
Eleftheriou E
影响因子:
38.3
作者:
Wang, Yifei;Landreman, Patrick;Brongersma, Mark L.
通讯作者:
Brongersma, Mark L.
影响因子:
29.4
作者:
Cheng, Zengguang;Rios, Carlos;Bhaskaran, Harish
通讯作者:
Bhaskaran, Harish