Growth of GaN Directly on Si(111) Substrate by Controlling Atomic Configuration of Si Surface by Metalorganic Vapor Phase Epitaxy
Growth of GaN Directly on Si(111) Substrate by Controlling Atomic Configuration of Si Surface by Metalorganic Vapor Phase Epitaxy
复制标题
通过金属有机气相外延控制 Si 表面原子构型在 Si(111) 衬底上直接生长 GaN
DOI：
10.1143/jjap.45.l478
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发表时间：
2006
影响因子：
1.5
通讯作者：
A. Koukitu
中科院分区：
文献类型：
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作者：
K. Takemoto;H. Murakami;T. Iwamoto;Yuriko Matsuo;Y. Kangawa;Y. Kumagai;A. Koukitu
通过金属有机气相外延（MOVPE）在Si（111）衬底上直接生长GaN外延层是使用没有含Al中间层的低温（LT）-GaN缓冲层（例如，AlN或AlGaN）。没有观察到由Si和Ga蒸气之间的反应引起的Si表面的劣化。然而，当表面上存在Ga液滴时，Ga和Si形成Ga-Si合金，这导致在高温下通过回熔蚀刻在表面上产生大量孔。此外，据透露，在Si上的LT-GaN缓冲层的覆盖率强烈影响的载气中的氢（H2）分压。使用氮气（N2）载气，可以直接在Si表面上实现LT-GaN缓冲层的完全覆盖。这些特点可以解释的事实，即Si表面的部分终止的氢原子和覆盖的Si表面取决于H2分压。
The direct growth of a GaN epitaxial layer on a Si(111) substrate by metalorganic vapor phase epitaxy (MOVPE) was performed using a low-temperature (LT)-GaN buffer layer with no Al-containing intermediate layer (e.g., AlN or AlGaN). No deterioration in the Si surface caused by the reaction between Si and Ga vapor was observed. However, when there were Ga droplets on the surface, Ga and Si formed a Ga–Si alloy, which caused the generation of numerous holes on the surface by melt-back etching at high temperatures. In addition, it was revealed that the coverage of the LT-GaN buffer layer on Si was strongly affected by the hydrogen (H2) partial pressure in the carrier gas. Using nitrogen (N2) carrier gas, a complete coverage of the LT-GaN buffer layer could be achieved directly over the Si surface. These features can be explained by the facts that the Si surface is partially terminated by hydrogen atoms and the coverage of hydrogen on Si surface depends on H2 partial pressure.
Y.KUMAGAI：“通过金属有机氯化氢气相外延在 GaAs (111) A 表面上生长厚六方 GaN 层以实现独立式 GaN”Jpn.J.Appl.Phys.. 39. L703-L706 (2000)
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