Synthesis of magnetron sputtered AgBiS2 thin films
Synthesis of magnetron sputtered AgBiS2 thin films
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磁控溅射 AgBiS2 薄膜的合成
DOI：
10.1142/s179360472150017x
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发表时间：
2021-04
影响因子：
1.3
通讯作者：
Yan Zhu
中科院分区：
文献类型：
--
作者：
ChengXiong Gao;Shuhong Sun;Jinkun Liu;Tao Shen;Yan Zhu
将原子比为1:1的银铋金属前驱体沉积在普通钠钙玻璃衬底上，在硫氮气氛下快速退火，采用直流磁控溅射法制备了AgBiS2薄膜。通过改变退火温度和退火时间，得到了不同的退火工艺。采用XRD、UV-Vis、SEM、AFM、XPS对膜进行了表征。通过硫化退火在衬底上生长AgBiS2薄膜。在475℃[公式：见文]C退火30 min后，膜表面光滑，粗糙度最小。平均晶粒尺寸最大可达1.2 m[公式：见文]。该薄膜在紫外和可见光范围内具有较强的吸收系数。吸收极限高达1400 nm，带隙为0.853 eV。通过溅射原子层沉积和硫化退火的研究，首次采用磁控溅射技术在衬底上制备了AgBiS2薄膜。为制备AgBiS2薄膜提供了一种可行的方法。在光伏、光电等方面具有很大的应用潜力。
AgBiS2 films were prepared by direct current magnetron sputtering method by depositing atom ratio 1:1 of silver bismuth metal precursor on a common sodium-calcium glass substrate by rapid annealing under sulfur and nitrogen atmosphere. The annealing process was obtained by changing the annealing temperature and time. The films were characterized by XRD, UV-Vis, SEM, AFM, XPS. AgBiS2 thin films were grown on the substrate through sulfide annealing. After annealing at 475[Formula: see text]C for 30 min, the surface of the film is smooth and the roughness is the smallest. The average grain size grows to the maximum of 1.2 [Formula: see text]m. The film has a strong absorption coefficient in the range of ultraviolet and visible light. The absorption limit is as high as 1400 nm, and the bandgap is 0.853 eV. Through the study of sputtered atomic layer deposition and sulfurized annealing, AgBiS2 film was prepared on the substrate by magnetron sputtering for the first time. It provides a feasible method for the preparation of AgBiS2 thin films. It has great potential in photovoltaic, photoelectric and other applications.
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影响因子：
5
作者：
A. Tabeti;M. Batouche;K. Bidai;A. Djied;T. Seddik;R. Khenata;H. Baltach;Xiaotian Wang
通讯作者：
A. Tabeti;M. Batouche;K. Bidai;A. Djied;T. Seddik;R. Khenata;H. Baltach;Xiaotian Wang
DOI：
10.1016/0378-5963(85)90241-7
发表时间：
1985-01-01
期刊：
APPLICATIONS OF SURFACE SCIENCE
影响因子：
--
作者：
NICOLAU, YF
通讯作者：
NICOLAU, YF
DOI：
10.1016/j.physb.2019.04.006
发表时间：
2019-07
期刊：
Physica B: Condensed Matter
影响因子：
--
作者：
L. Mehdaoui;R. Miloua;M. Khadraoui;M. Bensaid;Djelloul Abdelkader;F. Chiker;Athmane Bouzidi
通讯作者：
L. Mehdaoui;R. Miloua;M. Khadraoui;M. Bensaid;Djelloul Abdelkader;F. Chiker;Athmane Bouzidi
影响因子：
35
作者：
Bernechea, Maria;Miller, Nichole Cates;Konstantatos, Gerasimos
通讯作者：
Konstantatos, Gerasimos
通过各向异性部分阳离子交换反应进行二元-三元 Bi2S3-AgBiS2 棒对棒转化
影响因子：
4.6
作者：
Wang, Junli;Li, Linjie;Wang, Dan
通讯作者：
Wang, Dan