Stability and structure evolution in PMMA/SAN bilayer films upon solvent annealing
Stability and structure evolution in PMMA/SAN bilayer films upon solvent annealing
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溶剂退火后 PMMA/SAN 双层薄膜的稳定性和结构演变
DOI：
10.1007/s00396-016-3994-4
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发表时间：
2016
影响因子：
2.4
通讯作者：
Li Yongjin
中科院分区：
文献类型：
--
作者：
Yang Qiucheng;Zhu Yu;You Jichun;Li Yongjin
以PMMA [聚甲基丙烯酸甲酯（PMMA），上层]和SAN [聚苯乙烯-丙烯腈（SAN），下层]双层聚合物膜为例，用原子力显微镜（AFM）研究了溶剂退火后双层聚合物膜的稳定性。我们的研究结果表明，稳定性和结构演变的关键取决于所采用的退火溶剂的选择性。在醋酸（HAc，PMMA的选择性溶剂）蒸气中，上层PMMA层在稳定的底层SAN层上结露;在1，2-二氯苯（OBD，SAN的选择性溶剂）蒸气中退火后，双层膜保持稳定，因为OBD分子很难穿透和穿过上层PMMA层。当二甲基甲酰胺（表现出更高的溶解度SAN比PMMA）是用来退火的标本，溶剂分子溶胀和交叉的上层PMMA层，并在底部SAN层丰富。结果，SAN层使基底去湿，产生一些SAN液滴，而上层PMMA被SAN的运动“携带”。这就是上层膜破裂和形成“SAN液滴被PMMA岛覆盖”的原因。Figure1
The stability of bilayer polymer films upon solvent annealing has been investigated with the help of atomic force microscopy (AFM) by taking PMMA [poly(methyl methacrylate), the upper layer] and SAN [poly(styrene-ran-acrylonitrile), the bottom layer] system as an example. Our results indicate that the stability and structure evolution depend crucially on the selectivity of the adopted annealing solvents. In the vapor of acetic acid (HAc, the selective solvent for PMMA), the upper PMMA layer dewets on the stable bottom SAN layer; upon annealing in 1, 2-dichlorobenzene (OBD, the selective solvent for SAN) vapor, the bilayer film remains stable because it is very hard for OBD molecules to penetrate and cross the upper PMMA layer. When dimethylformamide (exhibiting much higher solubility for SAN than PMMA) is used to anneal the specimen, the solvent molecules swell and cross the upper PMMA layer and enrich in the bottom SAN layer. As a result, SAN layer dewets the substrate, producing some SAN droplets while the upper PMMA is “carried” by the movement of SAN. This is the reason for the rupture of the upper film and the formation of “SAN droplets covered by PMMA islands.”Figure1
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影响因子：
2.1
作者：
M. Krzywiecki;L. Grządziel;J. Bodzenta;J. Szuber
通讯作者：
M. Krzywiecki;L. Grządziel;J. Bodzenta;J. Szuber
影响因子：
5.5
作者：
Liao, YG;Su, ZH;An, LJ
通讯作者：
An, LJ
影响因子：
8.6
作者：
Sharma, A;Khanna, R
通讯作者：
Khanna, R
影响因子：
4.6
作者：
B. Newby;K. Wakabayashi;R. Composto
通讯作者：
B. Newby;K. Wakabayashi;R. Composto
影响因子：
4.6
作者：
Jichun You;Shanshan Hu;Yonggui Liao;Kaixu Song;Yongfeng Men;T. Shi;L. An
通讯作者：
Jichun You;Shanshan Hu;Yonggui Liao;Kaixu Song;Yongfeng Men;T. Shi;L. An