Valence electronic structure of tantalum carbide and nitride
Valence electronic structure of tantalum carbide and nitride
复制标题
碳化钽和氮化钽的价电子结构
DOI：
10.1007/s11433-007-0078-y
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发表时间：
2007-12
期刊：
影响因子：
--
通讯作者：
Zeng SongYan
中科院分区：
文献类型：
--
作者：
Sun LiLing;Fan ChangZeng;Wei ZunJie;Liu RiPing;Ma MingZhen;Wang WenKui;Zeng SongYan
The valence electronic structures of tantalum carbide (TaC) and tantalum nitride (TaN) are studied by using the empirical electronic theory (EET). The results reveal that the bonds of these compounds have covalent, metallic and ionic characters. For a quantitative analysis of the relative strength of these components, their ionicities have been calculated by implanting the results of EET to the PVL model. It has been found that the ionicity of tantalum carbide is smaller than that of tantalum nitride. The EET results also reveal that the covalent electronic number of the strongest bond in the former is larger than that of the latter. All these suggest that the covalent bond of TaC is stronger than that of TaN, which coincides to that deduced from the first-principles method.
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影响因子：
3.7
作者：
J. Vackár;A. Šimůnek
通讯作者：
J. Vackár;A. Šimůnek
影响因子：
4.6
作者：
A. Zaoui;B. Bouhafs;P. Ruterana
通讯作者：
A. Zaoui;B. Bouhafs;P. Ruterana
DOI：
10.1007/s003390000691
发表时间：
2001-08
期刊：
Applied Physics A
影响因子：
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作者：
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H. Nie;S. Xu;Shijie Wang;L. You;Zhihong Yang;C. Ong;Jing Li;T. Liew
影响因子：
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A. Zaoui;S. Kacimi;B. Bouhafs;A. Roula
通讯作者：
A. Zaoui;S. Kacimi;B. Bouhafs;A. Roula
影响因子：
3.7
作者：
E. Kurmaev;A. Moewes;Z. Pchelkina;I. Nekrasov;A. Rempel;D. Ederer
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E. Kurmaev;A. Moewes;Z. Pchelkina;I. Nekrasov;A. Rempel;D. Ederer