Scalable and Transfer-Free Fabrication of MoS(2)/SiO(2) Hybrid Nanophotonic Cavity Arrays with Quality Factors Exceeding 4000.
Scalable and Transfer-Free Fabrication of MoS(2)/SiO(2) Hybrid Nanophotonic Cavity Arrays with Quality Factors Exceeding 4000.
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DOI：
10.1038/s41598-017-07379-2
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发表时间：
2017-08-03
影响因子：
4.6
通讯作者：
Krenner HJ
中科院分区：
文献类型：
--
作者：
Hammer S;Mangold HM;Nguyen AE;Martinez-Ta D;Naghibi Alvillar S;Bartels L;Krenner HJ
我们报告了一个大阵列的混合二硫化钼（MoS 2）-二氧化硅（SiO2）的一维，独立的光子晶体腔能够增强的MoS 2光致发光在窄腔共振的完全可扩展的制造。我们证明了连续调谐的腔谐振波长跨越整个发射带的二硫化钼简单地通过变化的光子晶体的周期性。器件制造开始于在硅晶片上的非双折射热氧化物上使用化学气相沉积（CVD）进行MoS 2的衬底规模生长;随后在相同衬底上以超过50%的功能器件产率光刻制造光子晶体纳米腔阵列。我们的腔表现出三个主导模式，测得的线宽小于0.2纳米，对应的质量因子超过4000。所有的实验结果被发现是在良好的协议与时域有限差分（FDTD）模拟。CVD MoS 2为片上光子学提供了可扩展的直接带隙、无机、稳定和有效的发射体材料，而无需外延，并且即使对于后端线集成也处于CMOS兼容的工艺参数;我们的研究结果表明，在基于MoS 2的片上器件中基于腔的线窄化是可行的，因为它是例如片上光通信和传感中的频率复用操作所需要的。
We report the fully-scalable fabrication of a large array of hybrid molybdenum disulfide (MoS2) - silicon dioxide (SiO2) one-dimensional, free-standing photonic-crystal cavities capable of enhancement of the MoS2 photoluminescence at the narrow cavity resonance. We demonstrate continuous tunability of the cavity resonance wavelength across the entire emission band of MoS2 simply by variation of the photonic crystal periodicity. Device fabrication started by substrate-scale growth of MoS2 using chemical vapor deposition (CVD) on non-birefringent thermal oxide on a silicon wafer; it was followed by lithographic fabrication of a photonic crystal nanocavity array on the same substrate at more than 50% yield of functional devices. Our cavities exhibit three dominant modes with measured linewidths less than 0.2 nm, corresponding to quality factors exceeding 4000. All experimental findings are found to be in excellent agreement with finite difference time domain (FDTD) simulations. CVD MoS2 provides scalable access to a direct band gap, inorganic, stable and efficient emitter material for on-chip photonics without the need for epitaxy and is at CMOS compatible processing parameters even for back-end-of-line integration; our findings suggest feasibility of cavity based line-narrowing in MoS2-based on-chip devices as it is required for instance for frequency-multiplexed operation in on-chip optical communication and sensing.
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影响因子：
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