Numerical simulation of the multicomponent mass transfer during Bridgman growth of CdZnTe crystal using Maxwell-Stefan diffusion model
Numerical simulation of the multicomponent mass transfer during Bridgman growth of CdZnTe crystal using Maxwell-Stefan diffusion model
复制标题
使用 Maxwell-Stefan 扩散模型数值模拟 CdZnTe 晶体布里奇曼生长过程中的多组分传质
DOI：
10.1007/s11595-017-1602-1
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发表时间：
2017-05
影响因子：
1.6
通讯作者：
Yang Fan
中科院分区：
文献类型：
--
作者：
Yin Liying;Jie Wanqi;Wang Tao;Zhou Boru;Yang Fan
为了揭示三元化合物半导体生长过程中多组分传质的复杂机理，建立了基于Maxwell-Stefan方程的晶体Bridgman生长数值模型。估算了熔体中的Maxwell-Stefan扩散系数。用不同的安瓶移动速率和扩散系数计算了锌、镉和碲的分布。实验结果表明，生长界面附近熔体中的锌减少，并从块体熔体向生长界面扩散。对于CD来说，情况正好相反。锌和镉扩散的耦合作用导致Te在生长初期呈上行扩散。在整个生长过程中，熔体中Te的浓度在生长界面附近较低，但远离生长界面较高。增加安瓶移动速度会加剧锌和镉的偏析，从而使Te的均匀性变差。我们还发现，不仅扩散系数对物种扩散有显著影响，而且扩散系数之间的比例也对物种扩散有显著影响。
To reveal the complicated mechanism of the multicomponent mass transfer during the growth of ternary compound semiconductors, a numerical model based on Maxwell-Stefan equations was developed to simulate the Bridgman growth of CdZnTe crystal. The Maxwell-Stefan diffusion coefficients in the melt were estimated. Distributions of Zn, Cd, and Te were calculated with variable ampoule traveling rate and diffusion coefficients. The experimental results show that Zn in melt near the growth interface decreases and diffuses from the bulk melt to the growth interface. For Cd, the situation is just the opposite. The coupling effects of Zn and Cd diffusions result in an uphill diffusion of Te at the beginning of the growth. Throughout the growth, the concentration of Te in the melt keeps low near the growth interface but high far from the growth interface. Increasing the ampoule traveling rate will aggravate the segregation of Zn and Cd, and hence deteriorate the uniformity of Te. We also find that not only the diffusion coefficients but also the ratios between them have significant influence on the species diffusions.
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影响因子：
1.8
作者：
J. Derby;N. Zhang;A. Yeckel
通讯作者：
J. Derby;N. Zhang;A. Yeckel
影响因子：
1.8
作者：
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DOI：
10.1007/978-3-540-74761-1
发表时间：
2010
期刊：
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影响因子：
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作者：
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通讯作者：
G. Dhanaraj;K. Byrappa;V. Prasad;M. Dudley
DOI：
10.1002/pssc.200460836
发表时间：
2005-03
期刊：
Physica Status Solidi (c)
影响因子：
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作者：
R. Triboulet
通讯作者：
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影响因子：
1.8
作者：
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通讯作者：
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