A solvent-compatible filter-transfer method of semi-transparent carbon-nanotube electrodes stacked with silver nanowires.
A solvent-compatible filter-transfer method of semi-transparent carbon-nanotube electrodes stacked with silver nanowires.
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DOI：
10.1080/14686996.2022.2144092
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发表时间：
2022
影响因子：
5.5
通讯作者：
Kurihara, Masato
中科院分区：
文献类型：
--
作者：
Funabe, Mikuto;Satoh, Daiki;Ando, Rin;Daiguji, Hiroaki;Matsui, Jun;Ishizaki, Manabu;Kurihara, Masato
单壁碳纳米管(SWNTs)的低密度膜可用作全溶液处理的薄膜器件的半透明顶电极，但其半导体特性因其在溶剂中分散的实验因素而不同，并且由于溶剂不相容而破坏了亚层。在这项研究中，我们报道了一种溶剂相容的过滤转移方法来制备银纳米线(AgNWs)堆积的SWNT薄膜，并通过p/n与a硅片的异质结(SWNT/Si)来评估其半导体特性。用膜过滤器连续过滤AgNW和SWNTs的水分散液。成功地将堆积的半透明薄膜(密度可控的AgNW/SWNT薄膜)转移到玻璃板和硅片上。单壁碳纳米管的透过率在60%-80%之间，方阻在11-23 -1之间。在结面积为0.031Ω-−的情况下，旋涂Nafion树脂使单壁碳纳米管/硅的功率转换效率提高到11.2%，但随着单壁碳纳米管面积的增加，单壁碳纳米管的累积电阻大大降低到2%，当面积增加到0.5 /cm2时，单壁碳纳米管/硅的功率转换效率就大大降低到2%。对于0.031 cm2至1.13 cm2的面积，AgNW将PCE维持在10.7%至8.6%的范围内。所有的光伏参数都依赖于结面积，这表明AgNW在SWNTs的半导体层上起到了有效的集电层的作用，而不是AgNW与硅表面的直接接触。此外，我们还报道了将AgNW/SWNT薄膜转移到对溶剂敏感的钙钛矿材料(CH3NH3PbI3)上的溶剂相容实验。
Low-density films of single-walled carbon nanotubes (SWNTs) can be used as a semi-transparent top electrode for all-solution-processed film devices; however, their semiconductor characteristics vary depending on the experimental factors in their dispersion into solvents, and the sublayers are damaged as a result of solvent incompatibility. In this study, we report a solvent-compatible filter-transfer method for SWNT films stacked with silver nanowires (AgNWs), and evaluate the semiconductor characteristics through the p/n heterojunction with a Si wafer (SWNT/Si). AgNWs and SWNTs were successively filtered through their aqueous dispersion solutions using a membrane filter. The stacked semi-transparent films (AgNW/SWNT films with controlled densities) were successfully transferred onto glass plates and Si wafers. The transmittance at 550 nm revealed a window between 60% and 80% with a narrow sheet resistance range between 11 and 23 Ω □−1. The power conversion efficiency (PCE) of SWNT/Si was improved to 11.2% in a junction area of 0.031 cm2 through the use of spin-coated Nafion resins; however, the accumulated resistance of SWNTs drastically reduced the PCE to 2% as the area increased to ≥0.5 cm2. AgNWs maintained the PCE within a range of 10.7% to 8.6% for an area ranging from 0.031 cm2 to 1.13 cm2. All of the photovoltaic parameters were dependent on the junction areas, suggesting that AgNWs function as an effective current-collector layer on the semiconductor layer of SWNTs without direct contact of AgNWs with the Si surface. In addition, we report a solvent-compatible experiment for transferring AgNW/SWNT films onto a solvent-sensitive perovskite material (CH3NH3PbI3).
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影响因子：
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作者：
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通讯作者：
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