Silicon coupled with plasmon nanocavity generates bright visible hot-luminescence.
Silicon coupled with plasmon nanocavity generates bright visible hot-luminescence.
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DOI：
10.1038/nphoton.2013.25
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发表时间：
2013
期刊：
影响因子：
35
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中科院分区：
文献类型：
--
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由于硅基电子器件的器件速度和性能的限制，硅光电子学已经被广泛研究以实现超快光学数据处理。然而，最大的挑战是开发高效的硅基光源，因为硅的间接带隙导致发射效率极低。虽然量子限制硅在10 nm以下的长度尺度上的光发射已经被证明，但将量子结构与传统电子学集成仍然存在困难。期望开发新的概念以获得与当前电子器件（20-100 nm）兼容的长度尺度的来自硅的发射，其因此不利用量子限制效应。在这里，我们展示了一种全新的方法来实现明亮的可见光发射在“大尺寸”的硅耦合等离子体纳米腔从非热化载流子复合。等离子体硅中高度增强的发射量子效率（>1%），沿着其与现有硅电子器件的尺寸兼容性，为在常规微芯片上开发单片集成光源提供了新的途径。
Due to limitations in device speed and performance of silicon-based electronics, silicon optoelectronics has been extensively studied to achieve ultrafast optical-data processing. However, the biggest challenge has been to develop an efficient silicon-based light source since indirect band-gap of silicon gives rise to extremely low emission efficiency. Although light emission in quantum-confined silicon at sub-10 nm lengthscales has been demonstrated, there are difficulties in integrating quantum structures with conventional electronics. It is desirable to develop new concepts to obtain emission from silicon at lengthscales compatible with current electronic devices (20-100 nm), which therefore do not utilize quantum-confinement effects. Here, we demonstrate an entirely new method to achieve bright visible light emission in “bulk-sized” silicon coupled with plasmon nanocavities from non-thermalized carrier recombination. Highly enhanced emission quantum efficiency (>1%) in plasmonic silicon, along with its size compatibility with present silicon electronics, provides new avenues for developing monolithically integrated light-sources on conventional microchips.
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