Eu-Doped GaN Films Grown by Phase Shift Epitaxy
Eu-Doped GaN Films Grown by Phase Shift Epitaxy
复制标题
相移外延生长的掺铕氮化镓薄膜
DOI：
10.1143/apex.3.121002
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发表时间：
2010
影响因子：
2.3
通讯作者：
A. Steckl
中科院分区：
文献类型：
--
作者：
M. Zhong;A. Steckl
相移外延（PSE）是一种动态薄膜生长技术，其中组分通量以可调节的相移进行脉冲。PSE能够在生长周期的最佳阶段引入掺杂剂。Eu掺杂的GaN薄膜生长与Ga和Eu快门周期性地打开和关闭（具有变化的相移），同时保持N通量恒定，使得在每个周期期间表面上的Ga和Eu覆盖率以受控的方式变化。Eu浓度和光致发光（PL）效率受PSE参数的强烈影响。在高Ga覆盖率下，Eu离子掺杂表现出很强的PL效率。
Phase shift epitaxy (PSE) is a dynamic thin film growth technique wherein constituent fluxes are pulsed with an adjustable phase shift. PSE enables the introduction of dopants during the optimum segment of the growth cycle. Eu-doped GaN films were grown with Ga and Eu shutters periodically opened and closed (with varying phase shift) while keeping N flux constant, so that the Ga and Eu coverage on surface during each cycle varies in a controlled way. The Eu concentration and photoluminescence (PL) efficiency are strongly influenced by the PSE parameters. Eu ions doped during high Ga coverage exhibit strong PL efficiency.
p-GaN/Eu 掺杂 GaN/n-GaN 发光二极管电流注入红光发射的低压工作
DOI：
--
发表时间：
2010
期刊：
Physica Status Solidi(a) (印刷中)
影响因子：
--
作者：
藤原康文;西川敦;寺井慶和;Tadashi Takayanagi;藤原康文;M. Sasaki;H.Kasai;Misao Sasaki;西川敦
通讯作者：
西川敦