Simulation and laboratory test results of 3D CMS pixel detectors for HL-LHC
Simulation and laboratory test results of 3D CMS pixel detectors for HL-LHC
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HL-LHC 3D CMS 像素探测器的模拟和实验室测试结果
DOI：
10.1088/1748-0221/7/08/p08023
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发表时间：
2012
影响因子：
1.3
通讯作者：
L. Uplegger
中科院分区：
文献类型：
--
作者：
E. Alagoz;M. Bubna;A. Krzywda;G. Betta;M. Povoli;M. Obertino;A. Solano;A. Pereira;K. Arndt;G. Bolla;D. Bortoletto;M. Boscardin;S. Kwan;R. Rivera;I. Shipsey;L. Uplegger
CMS 像素探测器是大型强子对撞机最内部的跟踪设备，可重建相互作用顶点和带电粒子轨迹。目前位于像素探测器最内层的平面传感器将暴露在非常高的能量密度下，这会降低其性能。作为高亮度大型强子对撞机 (HL-LHC) 中平面像素传感器的可能替代品，3D 硅技术由于其在恶劣辐射环境中预期的良好性能而正在考虑之中。在大型强子对撞机的近束质子光谱仪中使用 3D 硅像素探测器的研究也在进行中。深反应离子蚀刻 (DRIE) 在制造 3D 硅探测器中发挥着关键作用，其中读出电极和欧姆电极是通过硅衬底加工的，而不是植入到硅表面上。本研究中考虑的 3D 像素设备在 FBK（意大利特伦托）进行处理，将凸块粘合到 CMS 像素读出芯片上，并在实验室中进行表征。还进行了数值模拟。我们报告实验室测量和 TCAD 模拟的选定结果。
The CMS pixel detector is the innermost tracking device at the LHC, reconstructing interaction vertices and charged particle trajectories. The current planar sensors located in the innermost layer of the pixel detector will be exposed to very high fluences which will degrade their performances. As a possible replacement for planar pixel sensors in the High Luminosity-LHC (HL-LHC), 3D silicon technology is under consideration due to its expected good performance in harsh radiation environments. Studies are also in progress for using 3D silicon pixel detectors in near-beam proton spectrometers at the LHC. Deep Reactive Ion Etching (DRIE) plays a key role in fabricating 3D silicon detectors in which readout and ohmic electrodes are processed through the silicon substrate instead of being implanted on the silicon surface. 3D pixel devices considered in this study were processed at FBK (Trento, Italy), bump bonded to the CMS pixel readout chip, and characterized in the laboratory. Numerical simulations were also carried out. We report on selected results from laboratory measurements and TCAD simulations.
3D 有源边缘硅传感器：ATLAS-IBL 生产的设备处理、产量和质量保证
DOI：
10.1016/j.nima.2012.05.070
发表时间：
2013
期刊：
Accelerators, Spectrometers, Detectors and Associated Equipment
影响因子：
--
作者：
Da Vià C
通讯作者：
Da Vià C