Plane-wave X-ray topography and its application at SPring-8.
Plane-wave X-ray topography and its application at SPring-8.
复制标题
平面波 X 射线形貌及其在 SPring-8 上的应用。
DOI：
10.1107/s0909049502004302
复制
发表时间：
2002
影响因子：
2.5
通讯作者：
S. Kimura
中科院分区：
文献类型：
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作者：
S. Iida;Y. Chikaura;S. Kawado;S. Kimura
平面波X射线形貌术实验是在一条200m长的光束线BL20B2上进行的。仅用一个准直器晶体就产生了30keV的高能X射线，其角发散角约为0.01角秒。对FZ-Si和CZ-Si晶片的传输几何结构(Laue情形)进行了表征。在FZ-Si晶体的摇摆曲线上观察到了清晰的振荡轮廓。获得了CZ-Si晶体中位错、生长条纹和内部微缺陷的平面波形貌图。还研究了晶格缺陷的形貌图像与样品-光板距离的关系。
Plane-wave X-ray topography experiments were carried out at a 200 m-long beamline, BL20B2, at SPring-8. Relatively high-energy X-rays of 30 keV with an angular divergence of about 0.01 arcsec were produced by using only one collimator crystal. FZ-Si and CZ-Si wafers were characterized in transmission geometry (Laue case). Clear oscillatory profiles in rocking curves of the FZ-Si crystal were observed. Plane-wave topographic images of dislocations, growth striations and grown-in microdefects in the CZ-Si crystals were obtained. The dependence of the topographic images of the lattice defects on the sample-photoplate distance was also studied.
S.Kimura：“利用极其准直的 X 射线，通过平面波 X 射线形貌分析 FZ 硅晶体中 A 旋涡缺陷周围的微小应变场。”
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