High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit.
High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit.
复制标题
高速 InAs 电子雪崩光电二极管克服了传统增益带宽积的限制。
作者：
A. Marshall;P. Ker;A. Krysa;J. David;C. Tan
报道了一种高带宽、非致冷的砷化铟（InAs）电子雪崩光电二极管（e-APD）。e-APD具有3.5 GHz的3dB带宽，与传统APD不同，其不随雪崩增益的增加而减小。因此，这些InAs e-APD证明了理论上理想的仅电子APD的特性，没有增益带宽积限制。这一点很重要，因为增益带宽乘积限制了所有传统高带宽APD中的最大可利用增益。在这些第一批高带宽e-APD上测量了高达580 GHz的非限制性增益带宽积。
High bandwidth, uncooled, Indium Arsenide (InAs) electron avalanche photodiodes (e-APDs) with unique and highly desirable characteristics are reported. The e-APDs exhibit a 3dB bandwidth of 3.5 GHz which, unlike that of conventional APDs, is shown not to reduce with increasing avalanche gain. Hence these InAs e-APDs demonstrate a characteristic of theoretically ideal electron only APDs, the absence of a gain-bandwidth product limit. This is important because gain-bandwidth products restrict the maximum exploitable gain in all conventional high bandwidth APDs. Non-limiting gain-bandwidth products up to 580 GHz have been measured on these first high bandwidth e-APDs.
影响因子：
2.5
作者：
P. Ker;A. Marshall;A. Krysa;J. David;C. Tan
通讯作者：
P. Ker;A. Marshall;A. Krysa;J. David;C. Tan