Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy
Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy
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通过分子束外延在 (411)A InP 衬底上生长的 In0.53Ga0.47As/In0.52Al0.48As 量子阱中的超平坦界面
DOI：
10.1007/s11664-998-0161-9
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发表时间：
1998
影响因子：
2.1
通讯作者：
S. Hiyamizu
中科院分区：
文献类型：
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作者：
T. Kitada;T. Saeki;M. Ohashi;S. Shimomura;A. Adachi;Y. Okamoto;N. Sano;S. Hiyamizu
在（411）a InP衬底上，通过分子束外延（MBE），在570℃的衬底温度和V/III=6条件下，成功地生长了In0.53Ga0.47As/In0.52Al0.48As量子阱（QWs），在宏观区域上实现了有效的原子平面界面（“（411）a超平面界面”）。In0.53Ga0.47As/In0.52Al0.48As量子阱表面形貌光滑，无特征，而在（100）InP衬底上同时生长的量子阱表面粗糙。孔宽为0.6-12 nm的（411）A QWs在4.2 K处的光致发光（PL）线宽比生长在（100）InP衬底上的QWs窄20 - 30%，并且几乎与生长中断的QWs在（100）InP衬底上的每个分裂PL峰一样窄。在（411）A QW的情况下，在晶圆上的大距离（7 mm）上，每个QW只观察到一个线宽非常窄的PL峰。
Effectively atomically flat interfaces over a macroscopic area (“(411)A super-flat interfaces”) were successfully achieved in In0.53Ga0.47As/In0.52Al0.48As quantum wells (QWs) grown on (411)A InP substrates by molecular beam epitaxy (MBE) at a substrate temperature of 570°C and V/III=6. Surface morphology of the In0.53Ga0.47As/In0.52Al0.48As QWs was smooth and featureless, while a rough surface of those simultaneously grown on a (100) InP substrate was observed. Photoluminescence (PL) linewidths at 4.2 K from the (411)A QWs with well width of 0.6–12 nm were 20–30 % narrower than those grown on a (100) InP substrate and also they are almost as narrow as each of split PL peaks for those of growth-interrupted QWs on a (100) InP substrate. In the case of the (411)A QWs, only one PL peak with very narrow linewidth was observed from each QW over a large distance (7 mm) on a wafer.
S.Shimomura：“通过分子束外延在 GaAs (411)A 基板上生长的高 Al 含量 (0.7) 的 GaAs/AlGaAs 量子阱中的极其平坦的界面”J.Cryst.Growth。
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