96 GHz 4.7 mW low-power frequency tripler with 0.5 V supply voltage
96 GHz 4.7 mW low-power frequency tripler with 0.5 V supply voltage
复制标题
96GHz 4.7mW 低功耗频率三倍频器，电源电压为 0.5V
DOI：
10.1049/el.2017.2523
复制
发表时间：
2017
影响因子：
1.1
通讯作者：
M. Schröter
中科院分区：
文献类型：
--
作者：
W. Liang;A. Mukherjee;P. Sakalas;A. Pawlak;M. Schröter
在高速电路中使用正向偏置基极集电极电压（VBC）通常不具有吸引力，因为与正向有源区域的偏置异质结双极晶体管（HBTs）相比，性能会下降。然而，在毫米波电路中使用超低电源电压提供了一个有趣的应用场景，不仅展示了现代硅锗（SiGe） HBT技术在实现严重功率限制的硅无线电路方面的潜力，而且还验证了紧凑模型的准确性，超出了通常由代工厂测量的标准特性。介绍了一种采用130nm SiGe HBT技术，采用降低电源电压（0.5 V）设计的96ghz三倍频器的结果。该三倍器的直流功耗仅为4.7 mW，转换损耗为3.8 dB，在32ghz时仅产生- 10 dBm的输入信号，输出信号为96ghz。分析了晶体管串联电阻对三倍器性能的影响。
Using forward‐biased base–collector voltage (VBC) in high‐speed circuits is usually not attractive due to the performance degradation compared with biasing heterojunction bipolar transistors (HBTs) in the forward‐active region. However, the use of ultra‐low supply voltage in millimetre‐wave circuits provides an interesting application scenario not only for demonstrating the potential of modern silicon germanium (SiGe) HBT technologies in implementing severely power‐constrained wireless circuits on silicon but also for verifying the accuracy of compact models beyond standard characteristics typically measured by foundries. The results of a 96 GHz frequency tripler deliberately designed with a reduced supply voltage (0.5 V) in a 130 nm SiGe HBT technology are presented. With only 4.7 mW DC power consumption, this frequency tripler achieves a conversion loss of 3.8 dB, generating a 96 GHz output signal with only −10 dBm input signal at 32 GHz. The impact of transistor series resistances on the tripler performance is also analysed.
利用饱和SiGe HBT实现超低电压/功率X波段低噪声放大器
DOI：
--
发表时间：
2011
期刊：
2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
影响因子：
--
作者：
S. Seth;C. Poh;T. Thrivikraman;R. Arora;J. Cressler
通讯作者：
J. Cressler