Evolution of a novel Si-18Mn-16Ti-11P alloy in Al-Si melt and its influence on microstructure and properties of high-Si Al-Si alloy
Evolution of a novel Si-18Mn-16Ti-11P alloy in Al-Si melt and its influence on microstructure and properties of high-Si Al-Si alloy
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新型Si-18Mn-16Ti-11P合金在Al-Si熔体中的演化及其对高硅Al-Si合金组织和性能的影响
DOI:
10.1016/j.rinp.2016.10.006
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发表时间:
2016
影响因子:
5.3
通讯作者:
Liu Xiang-Fa
中科院分区:
文献类型:
--
作者:
Zhou Xiao-Lu;Zhu Xiang-Zhen;Gao Tong;Wu Yu-Ying;Liu Xiang-Fa
A novel Si-18Mn-16Ti-11P master alloy has been developed to refine primary Si to 14.7 ± 1.3 μm, distributed uniformly in Al-27Si alloy. Comparing with traditional Cu-14P and Al-3P, Si-18Mn-16Ti-11P provided a much better refining effect, with in-situ highly active AlP. The refined Al-27Si alloy exhibited a CTE of 16.25 × 10−6/K which is slightly higher than that of Sip/Al composites fabricated by spray deposition. The UTS and elongation of refined Al-27Si alloy were increased by 106% and 235% comparing with those of unrefined alloy. It indicates that the novel Si-18Mn-16Ti-11P alloy is more suitable for high-Si Al-Si alloys and may be a candidate for refining hypereutectic Al-Si alloy for electronic packaging applications. Moreover, studies showed that TiP is the only P-containing phase in Si-18Mn-16Ti-11P master alloy. A core-shell reaction model was established to reveal mechanism of the transformation of TiP to AlP in Al-Si melts. The transformation is a liquid-solid diffusion reaction driven by chemical potential difference and the reaction rate is controlled by diffusion. It means sufficient holding time is necessary for Si-18Mn-16Ti-11P master alloy to achieve better refining effect.
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影响因子:
6.2
作者:
F. C. Hernández;J. Sokolowski
通讯作者:
F. C. Hernández;J. Sokolowski
DOI:
10.1007/s11661-008-9580-8
发表时间:
2008-10-01
影响因子:
2.8
作者:
Cho, Y. H.;Lee, H. -C.;Dahle, A. K.
通讯作者:
Dahle, A. K.
DOI:
--
发表时间:
2009
期刊:
Wisco Technology
影响因子:
--
作者:
Ying-hong Tu
通讯作者:
Ying-hong Tu
DOI:
10.1007/s10854-015-2973-8
发表时间:
2015-03
期刊:
Journal of Materials Science: Materials in Electronics
影响因子:
--
作者:
Z. Cai;Ri-chu Wang;C. Zhang;C. Peng;Linqian Wang
通讯作者:
Z. Cai;Ri-chu Wang;C. Zhang;C. Peng;Linqian Wang
影响因子:
9.4
作者:
Eiken, Janin;Apel, Markus;Schmid-Fetzer, Rainer
通讯作者:
Schmid-Fetzer, Rainer