New hexagonal boron nitride polytypes with triple-layer periodicity

New hexagonal boron nitride polytypes with triple-layer periodicity
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具有三层周期性的新型六方氮化硼多型体

DOI:
10.1063/1.4981892
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发表时间:
2017-04
影响因子:
3.2
通讯作者:
He Julong
He Julong
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Luo Kun;Yuan Xiaohong;Zhao Zhisheng;Yu Dongli;Xu Bo;Liu Zhongyuan;Tian Yongjun;Gao Guoying;He Julong

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正六方氮化硼(h-BN)样品存在一些固有的层错,这导致了对其电子性质的长期争论。为了解决这一争议,我们设计了8种具有三层周期性的BN多型型。在环境压力下,所有多型化合物的能量都在AA和AA (h-BN)结构之间。两种具有直接带隙的多型可能是导致h-BN样品中观察到的直接带隙的原因。通过分析h-BN样品的堆积特性和先前的实验显微照片,提出了一个模型来说明所提出的结构如何存在于h-BN样品中。
Regular hexagonal boron nitride (h-BN) samples present a few of intrinsic stacking faults, which result in a long-standing controversy about their electronic properties. To resolve this controversy, we designed eight possible BN polytypes with triple-layer periodicity. Under ambient pressure, the energies of all the proposed polytypes are between those of observed AA and Aa (h-BN) structures. Two proposed polytypes with direct bandgaps might be responsible for the direct bandgap observed in the h-BN samples. A model was proposed to show how the proposed structures might exist in the h-BN samples by analyzing the stacking characteristics and the previous experimental micrographs of h-BN samples.
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