Effect of proton radiation on 8T CMOS image sensors for space applications
Effect of proton radiation on 8T CMOS image sensors for space applications
复制标题
质子辐射对太空应用 8T CMOS 图像传感器的影响
DOI：
10.1080/10420150.2021.1898391
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发表时间：
2021-03
影响因子：
1
通讯作者：
Bing-kai Liu
中科院分区：
文献类型：
--
作者：
Jing Fu;Jie Feng;Yu-Dong Li;Qi Guo;Ying Wei;Lin Wen;Dong Zhou;Xiang Zhang;Yu-long Cai;Bing-kai Liu
图像传感器作为主流的光学成像电子器件，广泛应用于复杂辐射环境下的航天任务。研究了60和10 MeV质子辐照对商用全球快门8T互补金属氧化物半导体图像传感器暗电流、暗信号非均匀性和光子响应非均匀性的影响。注量范围为9 × 109p/cm2~7.26 × 1010p/cm2。沉积的总电离剂量达到10 krad(Si)，大大增加了暗电流。DSNU和PRNU也遵循类似的趋势，剂量增加，这是基于总剂量和位移损伤的影响。在辐照后，进行了TCAD模拟以识别辐射诱导的缺陷。结果表明，氧化层中捕获的正电荷、Si/SiO2界面的界面态以及钉扎光电二极管耗尽区的体缺陷显著地增加了暗电流。这项研究的结果为辐射加固图像传感器设计的进步提供了重要的参考。
As mainstream optical imaging electronic devices, image sensors are widely used in space missions under complex radiation environments. This study investigated the effects 60 and 10 MeV proton irradiations on dark current, dark signal non-uniformity (DSNU), and photon response non-uniformity (PRNU) for a commercial global shutter 8T complementary metal–oxide semiconductor (CMOS) image sensor. A fluence range from 9 × 109p/cm2to 7.26 × 1010p/cm2was considered. The total ionizing dose deposited reached 10 krad (Si), which significantly increased the dark current. DSNU and PRNU also followed a similar trend with an increase in the dose, which is based on the effects of the total dose and displacement damage. After irradiation, a TCAD simulation was conducted to identify the radiation-induced defects. The results showed that the trapped positive charges in the oxides, interface states in the Si/SiO2interface, and bulk defects in a pinned photodiode depleted region significantly increased the dark current. The outcomes of this study form significant reference for advancements in radiation-hardened image sensor designs.
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影响因子：
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作者：
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DOI：
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发表时间：
2010
期刊：
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影响因子：
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作者：
通讯作者：
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