Microwave engineering for semiconductor quantum dots in a cQED architecture
Microwave engineering for semiconductor quantum dots in a cQED architecture
复制标题
cQED 架构中半导体量子点的微波工程
DOI：
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发表时间：
2020
期刊：
影响因子：
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通讯作者：
M. Eriksson
中科院分区：
文献类型：
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作者：
Nathan Holman;J. Dodson;Lisa F. Edge;S. Coppersmith;S. Coppersmith;M. Friesen;Robert McDermott;M. Eriksson
我们开发了一个工程微波环境耦合高Q超导谐振器的量子点使用多层制造堆栈的点控制布线。解析和数值模型，了解寄生电容耦合的点偏置引线可以导致微波能量泄漏和低谐振器的品质因数。我们表明，通过控制点偏置布线的特性阻抗，片上品质因数可以达到8140，而无需增加显式滤波。使用这种方法，我们证明了单电子占领通过偶极或四极耦合到超导谐振器检测到的双和三重点。此外，通过使用多层制造，我们能够提高接地层的完整性，并将微波串扰保持在-20 dB以下，直到18 GHz，同时保持高的导线密度，这对于未来的电路量子电动力学（cQED）量子点处理器是必要的。
We develop an engineered microwave environment for coupling high Q superconducting resonators to quantum dots using a multilayer fabrication stack for the dot control wiring. Analytic and numerical models are presented to understand how parasitic capacitive coupling to the dot bias leads can result in microwave energy leakage and low resonator quality factors. We show that by controlling the characteristic impedance of the dot bias wiring, on-chip quality factors of 8140 can be attained without the addition of explicit filtering. Using this approach we demonstrate single electron occupation in double and triple dots detected via dipole or quadrupole coupling to a superconducting resonator. Additionally, by using multilayer fabrication we are able to improve ground plane integrity and keep microwave crosstalk below -20 dB out to 18 GHz while maintaining high wire density which will be necessary for future circuit quantum electrodyanmics (cQED) quantum dot processors.
影响因子：
3.5
作者：
Dodson, J. P.;Holman, Nathan;Eriksson, M. A.
通讯作者：
Eriksson, M. A.