Microstructure, mechanical and dielectric properties of highly porous silicon nitride ceramics produced by a new water-based freeze casting
Microstructure, mechanical and dielectric properties of highly porous silicon nitride ceramics produced by a new water-based freeze casting
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新型水基冷冻铸造生产的高多孔氮化硅陶瓷的微观结构、机械和介电性能
DOI:
10.1016/j.ceramint.2012.01.012
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发表时间:
2012-07
影响因子:
5.2
通讯作者:
Rubing Zhang, Daining Fang, Yongmao Pei, Licheng
中科院分区:
文献类型:
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作者:
Rubing Zhang, Daining Fang, Yongmao Pei, Licheng
Novel graded porous Si3N4ceramics with different solid content have been fabricated by a new water-based freeze-casting method. A 25μm-thick surface dense layer on the porous layer was successfully formed without any noticeable defects. A great number of fibrous grains protruding from the internal walls of the macroscopic aligned channels were observed in the porous Si3N4samples with 20–25vol.% solid content, but little fibrous grains were formed in the sample with 15vol.% solid content at the similar processing route. As the solid content increasing from 15 to 25vol.%, the porosity decreased from 76.8% to 66.4%, while the flexural strength and dielectric constants at 10GHz increased from 14.3MPa to 33.5MPa and 1.78 to 2.64, respectively. The dense/porous Si3N4ceramic is feasible in broadband radomes application at high temperature due to ultra-low dielectric constants and moderate strength.
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影响因子:
3.9
作者:
Young-Hag Koh;In-Kook Jun;Jong-Jae Sun;Hyoun‐Ee Kim
通讯作者:
Young-Hag Koh;In-Kook Jun;Jong-Jae Sun;Hyoun‐Ee Kim
影响因子:
3.9
作者:
J. She;Jianfeng Yang;D. Jayaseelan;N. Kondo;T. Ohji;S. Kanzaki;Y. Inagaki
通讯作者:
J. She;Jianfeng Yang;D. Jayaseelan;N. Kondo;T. Ohji;S. Kanzaki;Y. Inagaki
影响因子:
3.9
作者:
M. Backhaus-Ricoult;V. Guérin;A. Huntz;V. Urbanovich
通讯作者:
M. Backhaus-Ricoult;V. Guérin;A. Huntz;V. Urbanovich
影响因子:
3.9
作者:
Yumin Zhang;Luyang Hu;Jiecai Han
通讯作者:
Yumin Zhang;Luyang Hu;Jiecai Han
DOI:
10.1016/0025-5416(85)90236-8
发表时间:
1985-01-01
期刊:
MATERIALS SCIENCE AND ENGINEERING
影响因子:
--
作者:
BARTA, J;MANELA, M;FISCHER, R
通讯作者:
FISCHER, R