Statistical Analysis and Modeling of Random Telegraph Noise Based on Gate Delay Measurement
Statistical Analysis and Modeling of Random Telegraph Noise Based on Gate Delay Measurement
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基于门延迟测量的随机电报噪声统计分析和建模
DOI：
10.1109/tsm.2017.2715168
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发表时间：
2017
影响因子：
2.7
通讯作者：
H. Onodera
中科院分区：
文献类型：
--
作者：
A. Islam;Tatsuya Nakai;H. Onodera
我们提出了一种基于门延迟测量的随机电报噪声（RTN）的表征方法。为了将延迟变化转换为MOSFET阈值电压波动，<inline-formula><tex-math notation="LaTeX">$ {\Delta V_{T}}$</tex-math></inline-formula>，利用拓扑可重构环形振荡器。我们讨论的问题，检测RTN引起的离散波动的延迟和开发一个基于核密度的方法来检测波动。几个RTN性能的表征结果，从一个测试芯片在65 nm的散装工艺制造。特别关注的是适当的分布，目前RTN诱导的整体<inline-formula><tex-math notation="LaTeX">$ {\Delta V_{T}}$</tex-math></inline-formula>分布和栅极面积的依赖性。结果表明，对数正态分布更能代表总的<inline-formula><tex-math notation="LaTeX">$ {\Delta V_{T}}$</tex-math></inline-formula>分布。在弱反型操作下，对于单个栅极，观察到RTN引起的40%的延迟波动。局部过程变化和RTN幅度被发现是不相关的。因此，所提出的方法是适合于表征RTN的开关条件下工作的设备。
We propose a characterization methodology for random telegraph noise (RTN) based on gate delay measurement. To convert delay change to MOSFET threshold voltage fluctuation, <inline-formula> <tex-math notation="LaTeX">$ {\Delta V_{T}}$ </tex-math></inline-formula>, a topology-reconfigurable ring oscillator is utilized. We discuss the issue of detecting RTN-induced discrete fluctuations in the delay and develop a kernel density-based method to detect the fluctuations. Characterization results of several RTN properties from a test chip fabricated in a 65 nm bulk process are presented. Particular focus is given on the suitable distribution to present RTN-induced overall <inline-formula> <tex-math notation="LaTeX">$ {\Delta V_{T}}$ </tex-math></inline-formula> distribution and its gate area dependency. The results show that lognormal distribution is better at representing the total <inline-formula> <tex-math notation="LaTeX">$ {\Delta V_{T}}$ </tex-math></inline-formula> distribution. RTN-induced delay fluctuation of 40% has been observed for a single gate under weak inversion operation. Local process variation and RTN amplitude are found to be uncorrelated. The proposed methodology is thus suitable for characterizing RTN of devices operating under switching condition.
利用对数正态延迟分布提取与灵敏度无关的 Vth 变化
DOI：
--
发表时间：
2015
期刊：
影响因子：
--
作者：
A.K.M.Mahfuzul Islam;Hidetoshi Onodera
通讯作者：
Hidetoshi Onodera
基于门延迟变化测量的随机电报噪声统计分析和建模
DOI：
--
发表时间：
2016
期刊：
影响因子：
--
作者：
A.K.M. Mahfuzul Islam;Tatsuya Nakai;and Hidetoshi Onodera
通讯作者：
and Hidetoshi Onodera