Investigation of Inrush Current Induced Trench Gate Degradation Inside SiC Mosfet by New Fowler–Nordheim Localization Methodology
Investigation of Inrush Current Induced Trench Gate Degradation Inside SiC Mosfet by New Fowler–Nordheim Localization Methodology
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采用新的 Fowler-Nordheim 定位方法研究 SiC Mosfet 内部浪涌电流引起的沟槽栅极退化
DOI：
10.1109/tpel.2023.3348871
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发表时间：
2024
影响因子：
6.7
通讯作者：
Bo Zhang
中科院分区：
文献类型：
--
作者：
Hanqing Zhao;Xuan Li;Yifan Wu;Rui Yang;Qian Lou;Lingfeng Li;Xiaochuan Deng;Bo Zhang
在这封信中，深入研究了不同关断<sc>off</sc><italic>V</italic><sub>GS</sub>下碳化硅（SiC）金属氧化物半导体场效应晶体管（Mosfet）内沟槽栅极的浪涌电流衰减机制。引入预处理是为了保证门相关参数的准确性，避免可恢复组件的影响。同时，提出了一种新的 Fowler-Nordheim 定位方法，通过分别获得空穴和电子的势垒高度 <italic>phi</italic><sub>B</sub>，无损地评估沟道和非沟道区域栅极氧化物的退化程度。退化机制是由于负<italic>V</italic><sub>GS</sub>和浪涌电流分别导致电场方向和高空穴密度，导致大量空穴注入沟道区的栅极氧化物。退化机制提供了重要的物理见解，可以更好地理解不同关断<sc>off</sc><italic>V</italic><sub>GS</sub>的影响，并在实际电路中安全使用SiC <sc>mosfet</sc>。所提出的方法还为在各种操作条件下无损地评估沟道和非沟道区域的栅极氧化物的质量提供了新颖的一般指导。
In this letter, an inrush current degradation mechanism of trench gate inside silicon carbide (SiC) metal-oxide-semiconductor-field-effect transistor (Mosfet) is investigated in depth under different turn-<sc>off</sc> <italic>V</italic><sub>GS</sub>. The preconditioning is introduced to guarantee the accuracy of gate-related parameters, avoiding effect from recoverable components. Meanwhile, a new Fowler–Nordheim localization method is proposed to nondestructively evaluate degradation extent of gate oxide on channel and nonchannel region by achieving barrier height <italic>ϕ</italic><sub>B</sub> of hole and electron, respectively. The degradation mechanism is the substantial hole injection into gate oxide on channel region due to the electric field direction and high hole density resulting from negative <italic>V</italic><sub>GS</sub> and inrush current, respectively. The degradation mechanism provides significant physical insights to better understand the impact of different turn-<sc>off</sc> <italic>V</italic><sub>GS</sub> and safely use SiC <sc>mosfet</sc> in practical circuits. The proposed methodology also provides novel general guidance for nondestructively, assessing the quality of gate oxide of channel and nonchannel region under various operation conditions.
DOI：
10.1109/jestpe.2021.3064288
发表时间：
2022-10-01
影响因子：
5.5
作者：
Kozak, Joseph P.;Zhang, Ruizhe;Zhang, Yuhao
通讯作者：
Zhang, Yuhao