Kinetics of solid-state reactive diffusion between Sn–Ni alloys and Pd
Kinetics of solid-state reactive diffusion between Sn–Ni alloys and Pd
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Sn-Ni合金与Pd之间的固态反应扩散动力学
DOI：
10.1016/j.jallcom.2009.04.077
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发表时间：
2009
影响因子：
6.2
通讯作者：
M. Kajihara
中科院分区：
文献类型：
--
作者：
S. Tanaka;M. Kajihara
实验研究了（Sn-Ni）/Pd体系固相反应扩散动力学，考察了Ni对Sn基钎料与Pd/Ni/Cu多层导体互连线在等温加热过程中化合物生长行为的影响。采用扩散连接技术制备了由纯Pd和y=0.01，0.03和0.05的二元Sn-Ni合金组成的扩散偶，然后在T= 453 K和473 K下等温退火325 h。这里，y是Sn-Ni合金中Ni的摩尔分数。由于退火，在扩散偶中的（Sn-Ni）/Pd界面处形成（Pd，Ni）Sn 4、PdSn 4、PdSn 3和PdSn 2的化合物层。（Pd，Ni）Sn 4、PdSn 3和PdSn 2层的厚度比PdSn 4层的厚度小得多。因此，化合物层的生长由PdSn 4控制。化合物层的总厚度l的平方几乎与退火时间t成正比，如下：l2=Kt，其中K是抛物线系数。这种关系称为抛物线关系。由于晶粒生长发生在一定的速率在PdSn 4层，抛物线关系保证的化合物层的生长是由体积扩散控制。在T= 473 K时，K对y不敏感。在T= 453 K时，K值随y值的增大而显著减小，在y=0.03时达到最小值。K对y和T的这种依赖性归因于（Pd，Ni）Sn 4的形成。因此，在Sn基焊料中添加y=0.03的Ni显著地抑制了在固态钎焊加热期间Sn基焊料和多层Pd/Ni/Cu导体之间的互连处的化合物的生长，除非加热温度超过453 K。
The kinetics of the solid-state reactive diffusion in the (Sn–Ni)/Pd system was experimentally studied to examine the influence of Ni on the growth behavior of compounds at the interconnection between the Sn-base solder and the multilayer Pd/Ni/Cu conductor during energization heating. Diffusion couples composed of pure Pd and binary Sn–Ni alloys with y=0.01, 0.03 and 0.05 were prepared by a diffusion bonding technique, and then isothermally annealed at temperatures of T=453K and 473K for various times up to 325h. Here, y is the mol fraction of Ni in the Sn–Ni alloy. Owing to annealing, compound layers of (Pd, Ni)Sn4, PdSn4, PdSn3and PdSn2are formed at the (Sn–Ni)/Pd interface in the diffusion couple. The thickness is much smaller for the (Pd, Ni)Sn4, PdSn3and PdSn2layers than for the PdSn4layer. Therefore, the growth of the compound layers is governed by PdSn4. The square of the total thickness l of the compound layers is almost proportional to the annealing time t as follows: l2=Kt, where K is the parabolic coefficient. This relationship is called the parabolic relationship. Since grain growth occurs at certain rates in the PdSn4layer, the parabolic relationship guarantees that the growth of the compound layers is controlled by volume diffusion. At T=473K, K is insensitive to y. On the other hand, at T=453K, K remarkably decreases with increasing value of y, and reaches to the minimum at y=0.03. Such dependencies of K on y and T are attributed to the formation of (Pd, Ni)Sn4. Hence, the addition of Ni with y=0.03 into the Sn-base solder considerably suppresses the growth of compounds at the interconnection between the Sn-base solder and the multilayer Pd/Ni/Cu conductor during solid-state energization heating unless the heating temperature exceeds 453K.
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影响因子：
1.2
作者：
Kajihara, Masanori
通讯作者：
Kajihara, Masanori
DOI：
10.1016/j.msea.2004.08.053
发表时间：
2005-01
影响因子：
6.4
作者：
T. Yamada;K. Miura;M. Kajihara;N. Kurokawa;K. Sakamoto
通讯作者：
T. Yamada;K. Miura;M. Kajihara;N. Kurokawa;K. Sakamoto
固态温度下 Ni 对 Au 和 Sn 反应扩散的影响
DOI：
--
发表时间：
2006
期刊：
Mater.Sci.Eng.B 126[1]
影响因子：
--
作者：
M.Mita;K.Miura;T.Takenaka;M.Kajihara;N.Kurokawa;K.Sakamoto
通讯作者：
K.Sakamoto
二元系统中反应扩散的动力学特征
DOI：
--
发表时间：
2006
期刊：
Defect and Diffusion Forum 249
影响因子：
--
作者：
Teruyuki Monnai;Eiji Arai;Juhachi Oda;Testuo Tomiyama;Akihiro Hotta;A.Uedono et al.;Teruyuki Monnai;M.Kajihara;M.Kajihara
通讯作者：
M.Kajihara