An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform
An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform
复制标题
极化结平台GaN基单片功率集成电路技术综述
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
H. Iwai
中科院分区：
文献类型：
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作者：
A. Nakajima;S. Nishizawa;H. Ohashi;S. Kubota;R. Kayanuma;K. Tsutsui;K. Kakushima;H. Wakabayashi;H. Iwai
本文对GaN基极化结(PJ)技术进行了综述。在非掺杂GaN/AlGaN/GaN双异质结中，PJ平台晶片既有由正负极化电荷引起的高密度2D空穴气体(2DHG)，又有2D电子气(2DEG)。在该平台上，实现了GaN基n沟道晶体管和p沟道晶体管的单片运行。由于2DHG和2DEG的与温度无关的特性，GaN器件可以在很宽的温度范围内工作。此外，利用极化超结的概念，平台上还提供了高压晶体管和二极管。
This paper gives an overview of GaN-based polarization-junction (PJ) technologies. PJ platform wafers have both high-density 2D hole gas (2DHG) and 2D electron gas (2DEG) respectively induced by negative and positive polarization charges in undoped GaN/AlGaN/GaN double heterostructures. On the platform, monolithic operations of GaN-based n-channel transistors and p-channel transistors have been demonstrated. Because of temperature independent properties of the 2DHG and 2DEG, the GaN devices can operate in wide temperature range. In addition, high voltage transistors and diode are also available on the platform by using polarization-superjunction concept.
影响因子：
3.1
作者：
Hahn, Herwig;Reuters, Benjamin;Vescan, Andrei
通讯作者：
Vescan, Andrei