Scalability of spin field programmable gate array: A reconfigurable architecture based on spin metal-oxide-semiconductor field effect transistor
Scalability of spin field programmable gate array: A reconfigurable architecture based on spin metal-oxide-semiconductor field effect transistor
复制标题
自旋场可编程门阵列的可扩展性：基于自旋金属氧化物半导体场效应晶体管的可重构架构
DOI：
10.1063/1.3537923
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发表时间：
2011
影响因子：
3.2
通讯作者：
Yoshiaki Saito
中科院分区：
文献类型：
--
作者：
T. Tanamoto;H. Sugiyama;T. Inokuchi;T. Marukame;M. Ishikawa;K. Ikegami;Yoshiaki Saito
首次讨论了使用自旋金属氧化物半导体场效应晶体管（MOSFET）的现场可编程门阵列（FPGA）的可扩展性，其磁电流（MC）比在100-1000%的范围内。百万门自旋FPGA的面积和速度与22、32和45 nm技术的CMOS FPGA进行了数字基准测试，包括20%的晶体管尺寸变化。我们表明，由于自旋MOSFET的非易失性存储功能，减少了面积，提高了速度在自旋FPGA。
The scalability of a field programmable gate array (FPGA) using a spin metal-oxide-semiconductor field effect transistor (MOSFET) (spin FPGA) with a magnetocurrent (MC) ratio in the range of 100–1000% is discussed for the first time. The area and speed of million-gate spin FPGAs are numerically benchmarked with CMOS FPGA for 22, 32, and 45 nm technologies including a 20% transistor size variation. We show that the area is reduced and the speed is increased in spin FPGA due to the nonvolatile memory function of spin MOSFET.
影响因子：
4
作者：
Sugahara, S;Tanaka, M
通讯作者：
Tanaka, M