Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs
Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs
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N 极 GaN MIS-HEMT 中热电子和碰撞电离的观察
DOI：
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发表时间：
2018
影响因子：
4.9
通讯作者：
E. Zanoni
中科院分区：
文献类型：
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作者：
D. Bisi;C. de Santi;M. Meneghini;S. Wienecke;M. Guidry;Haoran Li;E. Ahmadi;S. Keller;U. Mishra;G. Meneghesso;E. Zanoni
本文报道了为高频工作而设计的N-极GaN基MIS-HEMT中的热电子和碰撞电离机制的观测结果。由于这种器件的栅极漏电极低，我们首次能够证明半导通状态下的电致发光(EL)和栅极电流之间的相关性。在半导通状态下，设备显示EL-VS-FORMANE；INLINE-FORMULE>；<；TEX-MASHIC NOTATION=“LaTeX”>；${ext{V}}_{EXT{gs}}$<；/INLINE-FORMANCE>；以及<；INLINE-FORMULE>；<；Tex-Math NOTATION=“LaTeX”>；${i}_{EXT{G}}$<；/Tex-Math>；的非单调钟形行为。<；/inline-formula>；-versus-<；inline-formula>；<；纹理数学符号=“LaTeX”>；${V}_{Ext{gs}}$<；/文本数学&>；<；/行内公式&>特征，并且EL信号的强度与<；行-公式&>；<；纹理-数学符号=“LaTeX”>；${i}_{G}imes{i}_{D}$<；/文本-数学&>成正比；<；/内联公式>；产品。这一结果是碰撞电离的实验证据：相关机制在信中进行了详细描述。
This letter reports on the observation of hot-electron and impact-ionization mechanisms in N-polar GaN-based MIS-HEMTs designed for high frequency (RF) operation. Thanks to the extremely low gate leakage of such devices, we were able to demonstrate—for the first time—a correlation between electroluminescence (EL) and gate current in the semi-on state. In the semi-on state, the devices show a non-monotonic, bell-shaped behavior of the EL-versus-<inline-formula> <tex-math notation="LaTeX">${ ext {V}}_{ ext {GS}}$ </tex-math></inline-formula> and of the <inline-formula> <tex-math notation="LaTeX">${I}_{ ext {G}}$ </tex-math></inline-formula>-versus-<inline-formula> <tex-math notation="LaTeX">${V}_{ ext {GS}}$ </tex-math></inline-formula> characteristics, and the intensity of the EL signal is proportional to the <inline-formula> <tex-math notation="LaTeX">${I}_{G} imes {I}_{D}$ </tex-math></inline-formula> product. The results are experimental evidence for impact ionization: the related mechanisms are described in detail in the letter.
DOI：
10.1088/0022-3727/49/43/435101
发表时间：
2016-11
期刊：
Journal of Physics D: Applied Physics
影响因子：
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作者：
T. Brazzini;Huarui Sun;F. Sarti;J. Pomeroy;C. Hodges;M. Gurioli;A. Vinattieri;M. Uren;M. Kuball
通讯作者：
T. Brazzini;Huarui Sun;F. Sarti;J. Pomeroy;C. Hodges;M. Gurioli;A. Vinattieri;M. Uren;M. Kuball