Resistance fluctuations in insulating silicon films with superconducting nanoprecipitates – superconductor-to-metal or vortex matter phase transition?
Resistance fluctuations in insulating silicon films with superconducting nanoprecipitates – superconductor-to-metal or vortex matter phase transition?
复制标题
超导纳米沉淀物绝缘硅膜的电阻波动——超导体到金属或涡旋物质相变？
DOI：
10.1063/1.4935871
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发表时间：
2015
期刊：
影响因子：
1.6
通讯作者：
W. Skorupa
中科院分区：
文献类型：
--
作者：
V. Heera;J. Fiedler;W. Skorupa
具有富Ga纳米沉淀物的硅膜是超导体还是绝缘体取决于它们的正常状态电阻。即使在绝缘状态下的薄膜超导纳米沉淀物存在低于7 K的临界温度，并确定其复杂的输运行为。在这个范围内，有时会出现大的随机电阻跳变，伴随着很小的温度变化。电阻在明确定义的低电阻值和更宽的高电阻带之间波动。跳变到更高的电阻与温度下降有关，反之亦然。我们目前的实验结果，这些波动，并假设一阶相变的薄膜作为可能的起源。
Silicon films with Ga-rich nanoprecipitates are superconductors or insulators in dependence on their normal state resistance. Even in the insulating state of the film superconducting nanoprecipitates exist below the critical temperature of 7 K and determine its complex transport behavior. In this range sometimes large, random resistance jumps appear that are accompanied by little temperature changes. The resistance fluctuates between a well-defined low-resistance value and a broader band of higher resistances. Jumps to higher resistance are associated with a temperature decrease and vice versa. We present experimental results on these fluctuations and suppose a first order phase transition in the film as probable origin.
影响因子：
4
作者：
Fiedler;Voelskow;Mücklich;Skrotzki;Herrmannsdörfer;Skorupa
通讯作者：
Skorupa