Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings
Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings
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高品质 II 型 GaSb/GaAs 量子环堆叠层的长波长光致发光
DOI：
10.1021/cg301674k
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发表时间：
2013
影响因子：
3.8
通讯作者：
Carrington P
中科院分区：
文献类型：
--
作者：
Carrington P
报道了用分子束外延技术成功地生长了10层GaSb/GaAs量子环的堆积层。在封顶过程中精确控制砷的流量有助于减少V族As-Sb的强烈交换反应，使环在相同的生长温度(480°C)下封顶而不会溶解。X-射线衍射仪和透射电子显微镜显示出良好的结构质量和均匀性，没有丝状位错。这是由于通过量子环的形成降低了平均应变。在低温下观察到一个波长为1.3μm的量子环光致发光峰，这是由于GaAs帽层中非故意的p掺杂减少而导致量子环电荷减少所致。文中还讨论了这种效应对未来太阳能电池和激光器器件设计的影响。
We report the successful molecular-beam epitaxial growth of 10 stacked layers of GaSb/GaAs quantum rings using a new procedure. Exact control of the arsenic flux during capping helps to reduce the strong group-V As–Sb exchange reactions, enabling the rings to be capped at the same growth temperature (480 °C) without dissolution. X-ray diffraction and transmission electron microscopy indicate excellent structural quality and uniformity with no threading dislocations. This is due to the reduction in the average strain through the quantum-ring formation. The total ring density in the stacks is 1 × 1011cm–2. An unusually long-wavelength quantum-ring photoluminescence peak of 1.3 μm is observed at low temperature, which is attributed to a reduction in the quantum-ring charging due to lower unintentional p-doping in the GaAs cap layer. The impact that this effect will have on future device designs in solar cells and lasers is also discussed.
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影响因子：
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