Silver-alloyed wide-gap CuGaSe2 solar cells
Silver-alloyed wide-gap CuGaSe2 solar cells
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银合金宽禁带 CuGaSe2 太阳能电池
DOI:
10.1016/j.solener.2021.10.055
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发表时间:
2021
期刊:
影响因子:
6.7
通讯作者:
Minemoto Takashi
中科院分区:
文献类型:
--
作者:
Nishimura Takahito;Doi Atsuya;Chantana Jakapan;Mavlonov Abdurashid;Kawano Yu;Minemoto Takashi
Crystal growth promotion for CuGaSe2(CGSe) photovoltaic absorber by silver (Ag)-addition is demonstrated, enhancing device performance for wide-gap CGSe solar cells. By introducing Ag precursor, the grain size in the polycrystalline CGSe films deposited by the three-stage process is increased, and a residual Ga2Se3phase during the growth is suppressed. Photoluminescence intensity is enhanced with Ag-addition, indicating reduced non-radiative recombination, which is related to the suppression of Ga2Se3phase and reduction of undesirable deep defect levels. For the Ag-alloyed CGSe solar cells, Urbach energy defined from the sub-gap tail in exponential external quantum efficiency is monotonically reduced from 25.5 to 21.1 meV, suggesting the improvement of CGSe bulk quality by Ag-alloying. Open-circuit voltage is enhanced since carrier recombination in Ag-alloyed CGSe bulk is suppressed. Short-circuit current density is also enhanced as carrier collection efficiency is improved by widened depletion width due to the reduction of carrier concentration by Ag-alloying. On the other hand, excess Ag-addition leads to increased series resistance and deterioration of the built-in potential in the solar cells due to the reduced carrier concentration in the Ag-alloyed CGSe absorber. Finally, the conversion efficiency is maximized to 5.3% at [Ag] / ([Ag] + [Cu]) ratio of 0.07 for the Ag-alloyed CGSe solar cells. These findings will help the performance enhancement for the wide-gap CGSe solar cells.
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DOI:
10.1109/jphotov.2019.2899962
发表时间:
2019-03
期刊:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)
影响因子:
--
作者:
Nicholas H. Valdes;Jinwoo Lee;W. Shafarman
通讯作者:
Nicholas H. Valdes;Jinwoo Lee;W. Shafarman
影响因子:
27.8
作者:
Jakapan Chantana;Takahito Nishimura;Y. Kawano;N. Suyama;A. Yamada;Y. Kimoto;T. Kato;H. Sugimoto;T. Minemoto
通讯作者:
T. Minemoto
影响因子:
27.8
作者:
Rodriguez-Alvarez, Humberto;Weber, Alfons;Mainz, Roland
通讯作者:
Mainz, Roland
影响因子:
2.7
作者:
J. Keller;L. Stolt;K. Sopiha;J. Larsen;L. Riekehr;M. Edoff
通讯作者:
M. Edoff
影响因子:
2.1
作者:
Erslev, Peter T.;Lee, JinWoo;Cohen, J. David
通讯作者:
Cohen, J. David