Charge Transport in Semiconductors Assembled from Nanocrystals

Charge Transport in Semiconductors Assembled from Nanocrystals
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纳米晶体组装的半导体中的电荷传输

DOI:
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发表时间:
2019
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影响因子:
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通讯作者:
V. Wood
V. Wood
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作者:
N. Yazdani;S. Andermatt;M. Yarema;Vasco Farto;M. H. Bani;Sebastian Volk;Weyde M. M. Lin;Olesya Yarema;M. Luisier;V. Wood

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由纳米晶体组装的半导体(NC半导体)的潜力已经被证明用于广泛的电子和光电器件阵列,包括晶体管、发光二极管、太阳能电池、光电探测器、热电器件和相电荷存储器单元。尽管纳米晶体作为光吸收体和发射体在商业上取得了成功,但由于无法预测控制其电子特性,涉及通过NC半导体的电荷传输的应用一直未能得到开发。在这里,我们进行大规模的从头算模拟,以了解载流子传输,生成和捕获在NC为基础的半导体从第一原理。我们使用这些发现来建立NC半导体中电荷传输的第一个预测模型,并通过实验进行验证。我们的工作表明,我们一直在错误地思考NC半导体中的输运。我们的新见解为NC半导体的系统工程提供了一条道路,实际上,这为其他半导体系统无法实现的可调性提供了前所未有的机会。
The potential of semiconductors assembled from nanocrystals (NC semiconductors) has been demonstrated for a broad array of electronic and optoelectronic devices, including transistors, light emitting diodes, solar cells, photodetectors, thermoelectrics, and phase charge memory cells. Despite the commercial success of nanocrystals as optical absorbers and emitters, applications involving charge transport through NC semiconductors have eluded exploitation due to the inability for predictive control of their electronic properties. Here, we perform large-scale, ab-initio simulations to understand carrier transport, generation, and trapping in NC-based semiconductors from first principles. We use these findings to build the first predictive model for charge transport in NC semiconductors, which we validate experimentally. Our work reveals that we have been thinking about transport in NC semiconductors incorrectly. Our new insights provide a path for systematic engineering of NC semiconductors, which in fact offer previously unexplored opportunities for tunability not achievable in other semiconductor systems.
DOI: 10.1021/acs.nanolett.7b00584
发表时间: 2017-02
期刊: Nano letters
影响因子: 10.8
作者:
I. Zaluzhnyy;R. Kurta;Alexander André;O. Gorobtsov;M. Rose;P. Skopintsev;I. Besedin;A. Zozulya;M. Sprung;F. Schreiber;I. Vartanyants;Marcus Scheele
通讯作者: I. Zaluzhnyy;R. Kurta;Alexander André;O. Gorobtsov;M. Rose;P. Skopintsev;I. Besedin;A. Zozulya;M. Sprung;F. Schreiber;I. Vartanyants;Marcus Scheele