Resonant tunnelling and negative differential conductance in graphene transistors.
Resonant tunnelling and negative differential conductance in graphene transistors.
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DOI：
10.1038/ncomms2817
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发表时间：
2013
影响因子：
16.6
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中科院分区：
文献类型：
--
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石墨烯和其他独立的二维晶体的化学稳定性意味着它们可以以不同的组合堆积起来，产生一类新的功能材料，专为特定的设备应用而设计。在这里，我们报道了狄拉克费米子通过氮化硼势垒的共振隧穿，氮化硼势垒是夹在两个石墨烯电极之间的几个原子层。当两个电极的电子光谱对齐时，就会发生共振。由于石墨烯独特的狄拉克光谱，器件特性中产生的负差分电导可持续到室温，并且栅极电压可调。尽管传统的包括夹在两个隧道势垒之间的量子井的共振隧道器件有几十纳米厚，但我们设备中的隧道载流子只跨越几个原子层，提供了超快传输时间的前景。这一特征与器件特性的多值形式相结合，在高频和逻辑器件中具有潜在的应用前景。石墨烯和相关的二维晶体的多层堆叠可以被定制，以创造新的功能材料类别。Britnell等人。报道了石墨烯-氮化硼-石墨烯晶体管中狄拉克费米子的共振隧穿和可调负微分电导。
The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report resonant tunnelling of Dirac fermions through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. The resonance occurs when the electronic spectra of the two electrodes are aligned. The resulting negative differential conductance in the device characteristics persists up to room temperature and is gate voltage-tuneable due to graphene’s unique Dirac-like spectrum. Although conventional resonant tunnelling devices comprising a quantum well sandwiched between two tunnel barriers are tens of nanometres thick, the tunnelling carriers in our devices cross only a few atomic layers, offering the prospect of ultra-fast transit times. This feature, combined with the multi-valued form of the device characteristics, has potential for applications in high-frequency and logic devices. Multilayer stacks of graphene and related two-dimensional crystals can be tailored to create new classes of functional materials. Britnell et al. report resonant tunnelling of Dirac fermions and tunable negative differential conductance in a graphene-boron nitride-graphene transistor.
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