Novel Evaluation System for Extreme Ultraviolet Lithography Resist in NewSUBARU
Novel Evaluation System for Extreme Ultraviolet Lithography Resist in NewSUBARU
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NewSUBARU 的新型极紫外光刻抗蚀剂评估系统
DOI：
10.1143/jjap.44.5556
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发表时间：
2005
影响因子：
1.5
通讯作者：
S. Y. Lee
中科院分区：
文献类型：
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作者：
Takeo Watanabe;H. Kinoshita;N. Sakaya;T. Shoki;S. Y. Lee
开发了一套用于极紫外光抗蚀剂显影的标准评价系统。用于评价EUV抗蚀剂的系统安装在NewSUBARU同步辐射装置的BL 3光束线上。该光学系统模拟六反射镜成像系统。入射光在腔室中反射七次。中心波长为13.57 nm。样品表面的光束尺寸为4×4 mm 2，通过横向移动样品，我们可以对每个样品进行12次拍摄。另外，在EUV照射下的抗蚀剂脱气分析中，使用能够测定1 ~ 500的离子种类的质量数的高灵敏度的四极质谱仪，该四极质谱仪与抗蚀剂评价室连接。整个系统的主要目的是评估各种EUV抗蚀剂候选物的基本物理和化学性质，例如灵敏度和排气特性。
A standard assessment system for resist development with extreme ultraviolet (EUV) light was developed. The system for the evaluation of an EUV resist was installed at the BL3 beamline in the NewSUBARU synchrotron radiation facility. This optical system simulates a six-mirror imaging system. Incident light is reflected seven times in the chamber. The centroid wavelength is 13.57 nm. The beam size at the sample surface is 4×4 mm2 and we can take twelve shots for each sample by moving the sample in the lateral direction. Furthermore, a highly sensitive quadrupole mass spectrometer that can measure the mass numbers of ion species from 1 to 500 and is connected to a resist evaluation chamber is used for resist outgassing analysis under EUV irradiation. The main purpose of this whole system is to evaluate the basic physical and chemical properties of various EUV resists candidates, such as sensitivity and outgas characteristics.
DOI：
--
发表时间：
2004
期刊：
Jpn.J.Appl.Phys. 43
影响因子：
--
作者：
T.Watanabe;K.Hamamoto;H.Kinoshita;H.Hada;H.Komano
通讯作者：
H.Komano