Characterization of defect levels in undoped n-BaSi2 epitaxial films on Si(111) by deep-level transient spectroscopy
Characterization of defect levels in undoped n-BaSi2 epitaxial films on Si(111) by deep-level transient spectroscopy
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通过深能级瞬态光谱表征 Si(111) 上未掺杂 n-BaSi2 外延膜的缺陷能级
DOI：
10.7567/jjap.54.07je01
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发表时间：
2014
影响因子：
1.5
通讯作者：
T. Suemasu
中科院分区：
文献类型：
--
作者：
H. Takeuchi;W. Du;M. Baba;R. Takabe;K. Toko;T. Suemasu
用深能级瞬态谱（DLTS）技术研究了分子束外延生长的650 nm厚未掺杂n-BaSi 2外延层中的电活性缺陷能级。层结构被设计成使得耗尽区在反向偏压条件下朝向n-BaSi 2层延伸。DLTS揭示了多数载流子（电子）陷阱的存在下，位于约0.1和0.2 eV的导带底部以下。这些陷阱能级的密度约为1 × 1015 cm−3。光响应光谱也讨论了这些陷阱的水平。在这项工作中没有检测到少数载流子陷阱。
Electrically active defect levels in 650-nm-thick undoped n-BaSi2 epitaxial layers grown by molecular beam epitaxy were investigated by deep-level transient spectroscopy (DLTS) using undoped n-BaSi2/p-Si heterojunction diodes. The layer structure was designed so that the depletion region extended toward the n-BaSi2 layers under reverse bias conditions. DLTS revealed the presence of majority-carrier (electron) traps located at approximately 0.1 and 0.2 eV below the bottom of the conduction band. The densities of these trap levels were approximately 1 × 1015 cm−3. Photoresponse spectra are also discussed in relation to these trap levels. Minority-carrier traps were not detected in this work.
影响因子：
6.7
作者：
Jackson, Philip;Hariskos, Dimitrios;Powalla, Michael
通讯作者：
Powalla, Michael
引入β-FeSi_2模板层对p-β-FeSi_2/n-Si异质界面附近Si区缺陷密度和少数载流子扩散长度的影响
影响因子：
1.5
作者：
川上;他6名
通讯作者：
他6名
影响因子：
4
作者：
Du, Weijie;Suzuno, Mitsushi;Suemasu, Takashi
通讯作者：
Suemasu, Takashi