A novel self-activated ultraviolet persistent luminescence material and its anti-counterfeiting application based on intensity and time resolution from persistent luminescence
A novel self-activated ultraviolet persistent luminescence material and its anti-counterfeiting application based on intensity and time resolution from persistent luminescence
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一种新型自激活紫外余辉发光材料及其基于余辉强度和时间分辨率的防伪应用
DOI：
10.1016/j.jre.2022.01.005
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发表时间：
2022-01
影响因子：
4.9
通讯作者：
Yun Zhang
中科院分区：
文献类型：
--
作者：
Shanshan Peng;Lin Liu;Liu Chun Wang;Rui Rong;Liang Song;Weixiong You;Junpeng Shi;Yun Zhang
近年来，紫外（UV）持久发光材料（PLM）引起了广泛的关注。然而，新型 UV PLM 的设计和开发以及探索其有前途的高级应用仍然是挑战。在此，我们开发了一种新型无掺杂剂自激活UVA PLM，Zn 2 Al 2 SiO 7 ，可应用于防伪领域。 Zn 2 Al 2 SiO 7 在 254 nm 紫外灯激发后显示出 UVA 持久发光 (PersL)，峰值位于 380 nm。 Yb 3+ 的添加使UVA PersL强度和时间明显提高，且UVA PersL时间持续超过24 h。此外，Yb 3+ 掺杂的Zn 2 Al 2 SiO 7 在不同光源下表现出光刺激特性。最后，我们根据Zn 2 Al 2 SiO 7 的PersL强度和时间分辨率设计了防伪图案，展示了其在防伪领域的优势。我们报道了一种新型自激活紫外持久发光材料Zn 2 Al 2 SiO 7 。添加Yb 3+ 后其PersL持续时间超过24小时。基于Zn 2 Al 2 SiO 7 和Zn 2 Al 2 SiO 7 :Yb 3+ PersL强度和时间分辨率的防伪图案显示了其在防伪领域的优势。
Recently, the ultraviolet (UV) persistent luminescence material (PLM) has attracted extensive attention. However, the design and development of new UV PLM and exploring their promising advanced application remain challenges. Here, we developed a new dopant-free self-activated UVA PLM, Zn 2 Al 2 SiO 7 , which could be applied in anti-counterfeiting field. Zn 2 Al 2 SiO 7 shows UVA persistent luminescence (PersL) peaking at 380 nm after 254 nm UV lamp excitation. Addition of Yb 3+ , the UVA PersL intensity and time are raised obviously, and the UVA PersL time lasts more than 24 h. In addition, Yb 3+ -doped Zn 2 Al 2 SiO 7 exhibits photostimulated properties with different light source. Finally, we design anti-counterfeiting pattern based on intensity and time resolution from PersL of Zn 2 Al 2 SiO 7 , showing its advantages in the anti-counterfeiting field. We report a novel self-activated ultraviolet persistent luminescence material Zn 2 Al 2 SiO 7 . Its PersL lasts more than 24 h by addition of Yb 3+ . An anti-counterfeiting pattern based on intensity and time resolution from PersL of Zn 2 Al 2 SiO 7 and Zn 2 Al 2 SiO 7 :Yb 3+ shows its advantage in the anti-counterfeiting field.
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影响因子：
4.9
作者：
Wu Meihua-;C. Wen;Siyuan Liu;Yichao Sun;Ling Huang;G. Chen;Zishan Zheng
通讯作者：
Wu Meihua-;C. Wen;Siyuan Liu;Yichao Sun;Ling Huang;G. Chen;Zishan Zheng
Bi3 掺杂 LiScGeO4 荧光粉中的长余紫外-A 持久发光和光刺激持久发光
影响因子：
7
作者：
Yi Zhang;Dongxun Chen;Weili Wang;Shao Yan;Jingwei Liu;Yanjie Liang
通讯作者：
Yanjie Liang
DOI：
10.3390/ma6072789
发表时间：
2013-07-12
期刊：
Materials (Basel, Switzerland)
影响因子：
--
作者：
Van den Eeckhout K;Poelman D;Smet PF
通讯作者：
Smet PF
影响因子：
9
作者：
Youfusheng Wu;Wei Wu
通讯作者：
Youfusheng Wu;Wei Wu
理论——通过拓扑化学反应引导缺陷调节，加速 UVC 持久荧光粉的发现
影响因子：
9
作者：
Li, Hong;Liu, Qi;Sun, Hong-Tao
通讯作者：
Sun, Hong-Tao