Highly Sensitive MoS2 Photodetector Based on Charge Integration and Field-Coupled Effect
Highly Sensitive MoS2 Photodetector Based on Charge Integration and Field-Coupled Effect
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基于电荷集成和场耦合效应的高灵敏度MoS2光电探测器
DOI：
10.1109/ted.2022.3217998
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发表时间：
2022-12
影响因子：
3.1
通讯作者：
Bin Yu
中科院分区：
文献类型：
--
作者：
Yunfan Dong;Jianhang Lv;Jian Chai;Feng Tian;Xiaoxue Cao;Xinyu Liu;Li Chen;Srikrishna Chanakya Bodepudi;Yuda Zhao;Yang Xu;Bin Yu
本文设计并制作了一种基于电荷积分和场耦合效应的高灵敏度二硫化钼光电探测器。对器件的场耦合效应机理和光响应特性进行了论证和评价。由于轻掺杂硅衬底中深耗尽区的强吸收和光子电荷集成、少层MoS2通道的强场耦合效应以及单层石墨烯（Gr）电极的有效载流子收集，所提出的MoS2光电探测器具有7.5\ × 10^{{4}}$ a /W的超高响应率，实现了响应率和响应速度之间的平衡。由脉冲栅电压触发的深耗尽效应，实现了有效的操纵和高线性度。与Gr通道的比较表明，MoS2光电探测器在抑制复位电流和将静态功耗降至~0.1 nW方面具有优势。本工作为提高基于tmd的光电探测器的性能提供了一条新的途径。
In this article, a highly sensitive molybdenum disulfide (MoS2) photodetector based on charge integration and field-coupled effect has been designed and fabricated. The mechanism of field-coupled effect and the photoresponse properties of the devices have been demonstrated and evaluated. Due to the strong absorption and photon-charges integration by deep-depletion region in a lightly doped silicon substrate, the strong field-coupled effect by few-layer MoS2 channel, and the effective carrier collection by monolayer graphene (Gr) electrode, the proposed MoS2-based photodetector exhibits an ultrahigh responsivity of $7.5\times 10^{{4}}$ A/W and achieves a compromise between responsivity and response speed. The deep-depletion effect triggered by pulse gate voltage enables effective manipulation and high linearity. A comparison with Gr channel shows the advantage of MoS2 photodetector in suppressing the reset current and reducing static power consumption to ~0.1 nW. This work provides a new route for improving the performance of TMDs-based photodetectors.
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