Highly sensitive active pixel image sensor array driven by large-area bilayer MoS(2) transistor circuitry.
Highly sensitive active pixel image sensor array driven by large-area bilayer MoS(2) transistor circuitry.
复制标题
DOI：
10.1038/s41467-021-23711-x
复制
发表时间：
2021-06-11
影响因子：
16.6
通讯作者：
Kim S
中科院分区：
文献类型：
--
作者：
Hong S;Zagni N;Choo S;Liu N;Baek S;Bala A;Yoo H;Kang BH;Kim HJ;Yun HJ;Alam MA;Kim S
近年来，各种大面积生长二维过渡金属二硫属化合物的方法被发展起来，以应用于未来的电子和光子学领域。然而，它们还没有被用于合成有源像素图像传感器。在这里，我们报告的有源像素图像传感器阵列与双层二硫化钼薄膜通过两步大面积生长方法制备。图像传感器的有源像素由二维MoS2开关晶体管和二维MoS2光电晶体管组成。在8 × 8有源像素图像传感器阵列中，双层MoS2光电晶体管的最大光响应度（Rph）在统计学上测得高达119.16 A W−1。借助于计算模型，我们发现双层MoS2光电晶体管的高Rph的主要机制是由在子带隙状态被捕获的空穴的光选通效应。利用光模板投影法成功地研究了双层MoS2有源像素图像传感器阵列的图像传感特性。在这里，作者报告的实现由64对开关晶体管和光电晶体管组成的有源像素图像传感器阵列，基于晶圆级双层二硫化钼。该器件在RGB光照射下表现出灵敏的光响应，显示了2D MoS2在图像传感应用中的潜力。
Various large-area growth methods for two-dimensional transition metal dichalcogenides have been developed recently for future electronic and photonic applications. However, they have not yet been employed for synthesizing active pixel image sensors. Here, we report on an active pixel image sensor array with a bilayer MoS2 film prepared via a two-step large-area growth method. The active pixel of image sensor is composed of 2D MoS2 switching transistors and 2D MoS2 phototransistors. The maximum photoresponsivity (Rph) of the bilayer MoS2 phototransistors in an 8 × 8 active pixel image sensor array is statistically measured as high as 119.16 A W−1. With the aid of computational modeling, we find that the main mechanism for the high Rph of the bilayer MoS2 phototransistor is a photo-gating effect by the holes trapped at subgap states. The image-sensing characteristics of the bilayer MoS2 active pixel image sensor array are successfully investigated using light stencil projection. Here, the authors report the realization of an active pixel image sensor array composed by 64 pairs of switching transistors and phototransistors, based on wafer-scale bilayer MoS2. The device exhibits sensitive photoresponse under RGB light illumination, showing the potential of 2D MoS2 for image sensing applications.
登录
查看更多内容
影响因子：
29.4
作者：
Choi, Woong;Cho, Mi Yeon;Kim, Sunkook
通讯作者：
Kim, Sunkook
影响因子：
16.6
作者：
Choi, Changsoon;Choi, Moon Kee;Kim, Dae-Hyeong
通讯作者：
Kim, Dae-Hyeong
影响因子：
41.2
作者：
Jeon, Sanghun;Ahn, Seung-Eon;Kim, Kinam
通讯作者：
Kim, Kinam
影响因子：
7
作者：
Choi, Hyun Tae;Kang, Ji-Hoon;Hwang, Do Kyung
通讯作者：
Hwang, Do Kyung
影响因子：
17.1
作者：
Hong, Seongin;Choi, Seung Hee;Kim, Sunkook
通讯作者：
Kim, Sunkook