Interfacial structure of Fe3Si/FeSi2 layered films deposited on si(111) at elevated substrate-temperatures
Interfacial structure of Fe3Si/FeSi2 layered films deposited on si(111) at elevated substrate-temperatures
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高温下沉积在 si(111) 上的 Fe3Si/FeSi2 层状薄膜的界面结构
DOI：
10.1142/s0217979209062943
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发表时间：
2009
影响因子：
1.7
通讯作者：
K. Nagayama
中科院分区：
文献类型：
--
作者：
K. Takeda;T. Yoshitake;Yoshiki Sakamoto;D. Hara;M. Itakura;N. Kuwano;K. Nagayama
研究了衬底温度对Si（111）衬底上沉积的Fe 3Si/FeSi 2层状薄膜界面结构的影响。在室温下生长了具有尖锐界面的Fe 3Si/FeSi 2薄膜。在300 °C的衬底温度下，Fe 3Si与FeSi 2层之间的界面明显不尖锐，而Fe 3Si的结晶度提高。组成的周期性结构几乎是不尖锐的，它是几乎相同的薄膜沉积在室温下的衬底温度。进行Fe 3Si层在FeSi 2层上的外延生长。该衬底温度是异质结构形成的上限。在400 °C时，由于活化的互扩散，形成了e-FeSi，Fe 3Si的结构由B2型部分转变为DO 3型。
Influence of substrate-temperature on the interfacial structure of Fe3Si/FeSi2 layered films deposited on a Si(111) substrate were studied. Fe3Si/FeSi2 films with sharp interfaces were grown at room substrate-temperature. At a substrate-temperature of 300 °C, interfaces between the Fe3Si and FeSi2 layers were obviously unsharpened, while the crystallinity of Fe3Si was enhanced. The compositional periodic structure was barely unsharpened and it was nearly the same as that of the films deposited at room substrate-temperature. Epitaxial growth of Fe3Si layers across FeSi2 layers was carried out. This substrate-temperature is the upper limit at which the heterostructure formation takes place. At 400 °C, e-FeSi was formed due to activated interdiffusion, and the structure of Fe3Si changed partially from B2-type to DO3-type.
纳米晶FeSi_2的光学性质及氢化作用的影响
DOI：
--
发表时间：
2006
期刊：
Applied Physics Letters 88
影响因子：
--
作者：
K.Takarabe et al.
通讯作者：
K.Takarabe et al.
面向靶材直流溅射在Si(III)上室温外延生长铁磁Fe_3Si薄膜
DOI：
--
发表时间：
2005
期刊：
Appl.Phys.Lett. 86
影响因子：
--
作者：
T.Yoshitake;et al.
通讯作者：
et al.