Suspended HfO$$_{2}$$2 photonic crystal slab on III-nitride/Si platform
Suspended HfO$$_{2}$$2 photonic crystal slab on III-nitride/Si platform
复制标题
III 氮化物/Si 平台上的悬浮 HfO$$_{2}$$2 光子晶体板
DOI：
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
Hongbo Zhu
中科院分区：
文献类型：
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作者：
Yongjin Wang;Jiao Feng;Z. Cao;Hongbo Zhu
我们在这里提出的悬浮氧化铪（HfO$$_{2}$2）光子晶体板上的III族氮化物/硅平台的制造。进行计算以模拟悬浮HfO$$_{2 }$$2光子晶体板。采用氮化铝（AlN）薄膜作为牺牲层形成气隙。利用电子束光刻技术在HfO$${2 }$$2薄膜上形成光子晶体图形，并在碱性溶液中通过湿法刻蚀AlN层在III族氮化物/Si平台上得到HfO$${2 }$$2悬浮光子晶体平板。该方法是有前途的悬浮HfO$$_{2 }$$2纳米结构的制造纳入III族氮化物/Si平台，或作为III族氮化物材料的外延生长的模板。
We present here the fabrication of suspended hafnium oxide (HfO$$_{2})$$2) photonic crystal slab on a III-nitride/Si platform. The calculations are performed to model the suspended HfO$$_{2 }$$2 photonic crystal slab. Aluminum nitride (AlN) film is employed as the sacrificial layer to form air gap. Photonic crystal patterns are defined by electron beam lithography and transferred into HfO$$_{2 }$$2 film, and suspended HfO$$_{2 }$$2 photonic crystal slab is achieved on a III-nitride/Si platform through wet-etching of AlN layer in the alkaline solution. The method is promising for the fabrication of suspended HfO$$_{2 }$$2 nanostructures incorporating into a III-nitride/Si platform, or acting as the template for epitaxial growth of III-nitride materials.
影响因子：
4
作者：
Chen, Rui;Sun, H. D.;Choi, H. W.
通讯作者：
Choi, H. W.