A body bias generator with wide supply-range down to threshold voltage for within-die variability compensation
A body bias generator with wide supply-range down to threshold voltage for within-die variability compensation
复制标题
体偏置发生器具有低至阈值电压的宽电源范围，用于芯片内变异性补偿
DOI：
10.1109/asscc.2014.7008858
复制
发表时间：
2014
期刊：
影响因子：
--
通讯作者：
H. Onodera
中科院分区：
文献类型：
--
作者：
Norihiro Kamae;Islam A. K. M. Mahfuzul;A. Tsuchiya;H. Onodera
提出了一种适用于宽供电范围细粒体偏的体偏发生器（BBG）。虽然FGBB在降低可变性和功耗方面是有效的，但在一个模具上需要许多bbg，因此简化bbg的设计是必要的。本文提出了一种基于电池的BBG设计，该设计仅从接近阈值500mV到标称电压1.2V的核心电源电压范围内产生正向和反向体偏置电压。这种宽的工作范围是由一个低电压误差放大器和一个v偏置方案实现的内部开关电容电荷泵。我们在65nm低功耗CMOS工艺中制作了正向/反向BBG，以控制0.22mm2的核心电路，BBG的面积开销为2.3%。
A body bias generator (BBG) for fine-grain body biasing (FGBB) that can operate under wide supply-range is proposed. While FGBB is effective in reducing variability and power consumption, a number of BBGs are required on a die and therefore simplified design of BBGs is necessary. This paper proposes a cell-based design of a BBG that generates forward and reverse body bias voltages only from a core supply voltage ranging from the near threshold of 500mV to the nominal voltage of 1.2V. This wide operating range is achieved by a low voltage error amplifier with a Vth biasing scheme achieved by internal switched-capacitor charge pumping. We fabricated the forward/reverse BBG in a 65nm low power CMOS process to control 0.22mm2 of core circuit with the area overhead of 2.3% for the BBG.
一种用于芯片内变异补偿的低电源电压体偏置发生器
DOI：
10.1587/transfun.e97.a.734
发表时间：
2014
期刊：
IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences
影响因子：
--
作者：
Norihiro KAMAE;Akira TSUCHIYA;Hidetoshi ONODERA
通讯作者：
Hidetoshi ONODERA